This paper reviews the recent progress in MEMS for radio frequency (RF) applications from
a device perspective. RF MEMS devices reviewed include switches and relays, tunable …

A surface micromachined miniature switch has been made on a semi-insulating GaAs
substrate using a suspended silicon dioxide micro-beam as the cantilevered arm, a platinum …

2018-02-21 Assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES
ALTERNATIVES reassignment COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX …

Describes the properties of novel III-N-based insulating gate heterostructure field-effect
transistors (HFETs). For the gate isolation, these devices use either SiO/sub 2/layer (in metal …

DC to 40 GHz and 20 to 40 GHz monolithic GaAs SPDT switches have been demonstrated.
Both the measured and the modeled small-signal performance are presented. Measured …

3,699,359 A 10/1972 Shelby 3,975,671 A 8, 1976 Stoll 3,988,727 A 10, 1976 Scott
4,244,000 A 1/1981 Ueda et al. 4,256,977 A 3, 1981 Hendrickson 4,316,101 A 2f1982 …

We demonstrate a novel RF switch based on a multifinger AlGaN/GaN MOSHFET. Record
high saturation current and breakdown voltage, extremely low gate leakage current and low …

Heterojunction FETs or high electron-mobility transistors (HEMTs) based on Al/sub x/Ga/sub
1-x/N/GaN are studied for their use as control components for high-power microwave and …

GaAs MESFET's designed for control applications have improved switching performance
compared to FET's designed for low-noise or high-power amplifiers. A broad-band switching …

Q-spoiling is the process of decoupling an MRI receive coil to protect the equipment and
patient. Conventionally, Q-spoiling is performed using a PIN diode switch that draws …