Progress in infrared photodetectors since 2000
C Downs, TE Vandervelde - Sensors, 2013 - mdpi.com
The first decade of the 21st-century has seen a rapid development in infrared photodetector
technology. At the end of the last millennium there were two dominant IR systems, InSb-and …
technology. At the end of the last millennium there were two dominant IR systems, InSb-and …
Type-II superlattice infrared detectors
DZY Ting, A Soibel, L Höglund, J Nguyen… - Semiconductors and …, 2011 - Elsevier
Publisher Summary This chapter provides an overview of type-II superlattice infrared
detectors. The type-II InAs/GaSb superlattices have several fundamental properties that …
detectors. The type-II InAs/GaSb superlattices have several fundamental properties that …
Electronic band structures and optical properties of type-II superlattice photodetectors with interfacial effect
The electronic band structures and optical properties of type-II superlattice (T2SL)
photodetectors in the mid-infrared (IR) range are investigated. We formulate a rigorous band …
photodetectors in the mid-infrared (IR) range are investigated. We formulate a rigorous band …
Dual-band unipolar barrier infrared photodetector based on InGaAsSb bulk and type-II InAs/GaSb superlattice absorbers
We reported on the material and device characterization of a dual-band unipolar barrier
infrared photodetector with n-In 0.28 Ga 0.72 As 0.25 Sb 0.75 bulk and InAs/GaSb type-II …
infrared photodetector with n-In 0.28 Ga 0.72 As 0.25 Sb 0.75 bulk and InAs/GaSb type-II …
Interface engineered MBE grown InAs/GaSb based type-II superlattice heterostructures
Abstract Strain balanced InAs/GaSb type-II superlattice structures have been grown using
molecular beam epitaxy. InSb like interfaces have been introduced at both InAs on GaSb …
molecular beam epitaxy. InSb like interfaces have been introduced at both InAs on GaSb …
Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long …
Y Huang, JH Ryou, RD Dupuis, VR D'costa… - Journal of Crystal …, 2011 - Elsevier
We report on the epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-ІІ
superlattices (T2SLs) on GaSb substrates by metalorganic chemical vapor deposition. For …
superlattices (T2SLs) on GaSb substrates by metalorganic chemical vapor deposition. For …
Long-wave InAs/GaSb superlattice detectors based on nBn and pin designs
The development of type-II InAs/GaSb superlattice (SL) detectors with nBn and pin designs
for the long-wave infrared (LWIR) spectral region is discussed. The dependence of dark …
for the long-wave infrared (LWIR) spectral region is discussed. The dependence of dark …
Material and device characterization of Type-II InAs/GaSb superlattice infrared detectors
This work investigates midwave infrared Type-II InAs/GaSb superlattice (SL) grown by
molecular beam epitaxy on GaSb substrate. In order to compensate the natural tensile strain …
molecular beam epitaxy on GaSb substrate. In order to compensate the natural tensile strain …
Strain-balanced InAs/GaSb superlattices used for the detection of VLWIR radiation
A Jasik, I Sankowska, K Czuba, J Ratajczak… - Infrared Physics & …, 2022 - Elsevier
This work reports on the impact of defects on the parameters of type II InAs/GaSb
superlattices (SLs) and photoconductors (PCs) from the very long wavelength infrared …
superlattices (SLs) and photoconductors (PCs) from the very long wavelength infrared …
High-performance mid-wavelength InAs/GaSb superlattice infrared detectors grown by production-scale metalorganic chemical vapor deposition
Y Huang, M Xiong, Q Wu, X Dong… - IEEE Journal of …, 2017 - ieeexplore.ieee.org
We demonstrate high-performance mid-wavelength pin infrared detectors based on
InAs/GaSb type-II superlattices (SLs) grown by a production-scale metalorganic chemical …
InAs/GaSb type-II superlattices (SLs) grown by a production-scale metalorganic chemical …