1.9-kV AlGaN/GaN lateral Schottky barrier diodes on silicon
In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed
anodes and dual field plates. A low specific ON-resistance R ON, SP (5.12 mQ· cm 2), a low …
anodes and dual field plates. A low specific ON-resistance R ON, SP (5.12 mQ· cm 2), a low …
High-voltage vertical Ga2O3 power rectifiers operational at high temperatures up to 600 K
This work presents the temperature-dependent forward conduction and reverse blocking
characteristics of a high-voltage vertical Ga 2 O 3 power rectifier from 300 K to 600 K …
characteristics of a high-voltage vertical Ga 2 O 3 power rectifier from 300 K to 600 K …
2.07-kV AlGaN/GaN Schottky barrier diodes on silicon with high Baliga's figure-of-merit
CW Tsou, KP Wei, YW Lian… - IEEE Electron Device …, 2015 - ieeexplore.ieee.org
In this letter, we demonstrate high-performance AlGaN/GaN Schottky barrier diodes (SBDs)
on Si substrate with a recessed-anode structure for reduced turn-on voltage VON. The …
on Si substrate with a recessed-anode structure for reduced turn-on voltage VON. The …
Graphene/GaN Schottky diodes: Stability at elevated temperatures
Rectification and thermal stability of diodes formed at graphene/GaN interfaces have been
investigated using Raman Spectroscopy and temperature-dependent current-voltage …
investigated using Raman Spectroscopy and temperature-dependent current-voltage …
A 1.9-kV/2.61-m cm2 Lateral GaN Schottky Barrier Diode on Silicon Substrate With Tungsten Anode and Low Turn-ON Voltage of 0.35 V
In this letter, we report the achievement of a high-performance lateral GaN Schottky barrier
diode (SBD) on a silicon substrate with a low turn-ON voltage () of 0.35 V and tungsten (W) …
diode (SBD) on a silicon substrate with a low turn-ON voltage () of 0.35 V and tungsten (W) …
Temperature dependence of barrier height in Ni/n-GaN Schottky barrier diode
T Maeda, M Okada, M Ueno, Y Yamamoto… - Applied Physics …, 2017 - iopscience.iop.org
The temperature dependence of barrier height in a Ni/n-GaN Schottky barrier diode
fabricated on a GaN homoepitaxial layer was investigated by capacitance–voltage, current …
fabricated on a GaN homoepitaxial layer was investigated by capacitance–voltage, current …
Influence of substrate temperature on the structural, optical properties, and IV characteristics of n-AgInSe2/p-Si heterojunctions
H Shaban, MA Mahdy, SH Moustafa… - Materials Science and …, 2023 - Elsevier
The influence of substrate temperatures T sub (300–573 K) on the structure, optical, and IV
electrical properties of nanostructured AgInSe 2 thin films has been studied. The thermal …
electrical properties of nanostructured AgInSe 2 thin films has been studied. The thermal …
Low ON-Resistance GaN Schottky Barrier Diode With High Uniformity Using LPCVD Si3N4 Compatible Self-Terminated, Low Damage Anode Recess …
J Gao, Y Jin, B Xie, CP Wen, Y Hao… - IEEE Electron …, 2018 - ieeexplore.ieee.org
In this letter, we demonstrate a recessed-anode Schottky barrier diode (SBD) on a double
AlGaN/GaN heterojunction structure. A self-terminated, oxidation/wet etching with low …
AlGaN/GaN heterojunction structure. A self-terminated, oxidation/wet etching with low …
Metal induced inhomogeneous Schottky barrier height in AlGaN/GaN Schottky diode
The dependence of barrier height inhomogeneity on the gate metal has been investigated
for the AlGaN/GaN Schottky diode. The analysis from the electroreflectance spectroscopy …
for the AlGaN/GaN Schottky diode. The analysis from the electroreflectance spectroscopy …
Influence of the p-type doping concentration on reflection-mode GaN photocathode
X Wang, B Chang, L Ren, P Gao - Applied Physics Letters, 2011 - pubs.aip.org
Four different p-type doping GaN photocathodes are activated by Cs/O, and the quantum
efficiency (QE) curves are obtained. According to the QE equation, the curves are fitted. Both …
efficiency (QE) curves are obtained. According to the QE equation, the curves are fitted. Both …