The reaction of boron trichloride with the H-and Cl-terminated Si (1 0 0) surfaces was
investigated to understand the interaction of this molecule with the surface for designing wet …

The initial steps in the growth process of atomic layer deposition (ALD) of titanium dioxide at
room temperature (RT) were investigated using tetrakis (dimethylamino) titanium (TDMAT) …

This work confirms that radical intermediates are the reactive species in
quinhydrone/methanol (QHY/ME) passivation on silicon surfaces. The two constituent parts …

The dynamics of reactions of SiCl 2 at Si (100) surfaces was investigated through the
molecular orbital method at the B3LYP/6-31G (d, p) level of theory, with the surface being …

The computational prediction of the surface adsorption in atomic layer deposition of gallium
oxide by using trimethylgallium (TMG) is investigated. One dimer of Si (100)(2× 1) is used as …

Using first-principle calculations, the mechanism of oxygen insertion into the (0001) 6H−
silicon carbide 3× 3 reconstructed surface is investigated. The stable chemisorbed oxygen …

In this work, we have tested 30 different adsorption situations in several coverage scenarios
for the 1‐amino‐3‐cyclopentene (ACP) molecule on the Si (100) surface. We have used a …

In this work, we study the effects of the tert-butiloxycarbonyl protecting group at the
adsorption coverage of protected 1-amino-3-cyclopentene (ACP) on the Si (100) surface by …

This work reports the adsorption characteristic of trimethylgallium (TMG) on the silicon
surface in the adsorption step of atomic layer deposition (ALD) to prepare gallium oxide thin …

We have studied the adsorption of the protected form of amino-cyclopentene on the Si (100)
surface at several coverage densities, using a very large cluster of 21 silicon dimers and a …