Investigation of dielectric relaxation and ac electrical conductivity using impedance spectroscopy method in (AuZn)/TiO2/p-GaAs (1 1 0) schottky barrier diodes
Dielectric properties and ac electrical conductivity of (AuZn)/TiO 2/p-GaAs (1 1 0) Schottky
barrier diodes (SBDs) were investigated by using impedance spectroscopy method …
barrier diodes (SBDs) were investigated by using impedance spectroscopy method …
On frequency and voltage dependent physical characteristics and interface states characterization of the metal semiconductor (MS) structures with (Ti: DLC) interlayer
In this present study, the electrical parameters of Al/p-Si (MS) structures with (Ti-doped DLC)
interfacial layer were investigated between 1 kHz and 4 MHz utilizing impedance …
interfacial layer were investigated between 1 kHz and 4 MHz utilizing impedance …
A comparison of electrical parameters of Au/n-Si and Au/(CoSO4–PVP)/n-Si structures (SBDs) to determine the effect of (CoSO4–PVP) organic interlayer at room …
Ş Altındal, Ö Sevgili, Y Azizian-Kalandaragh - Journal of Materials Science …, 2019 - Springer
Abstracts In this study, the Au/n-Si structures with and without (CoSO 4–PVP) organic
interlayer were fabricated on the same n-Si wafer and electrical characteristics of them were …
interlayer were fabricated on the same n-Si wafer and electrical characteristics of them were …
Capacitance, conductance, and dielectric characteristics of Al/TiO2/Si diode
HH Gullu, DE Yildiz - Journal of Materials Science: Materials in Electronics, 2021 - Springer
In this study, electrical properties of the Al/TiO 2/p-Si diode structure with an atomic layer
deposited TiO 2 interface layer are investigated by current–voltage (IV IV), capacitance …
deposited TiO 2 interface layer are investigated by current–voltage (IV IV), capacitance …
Impedance spectroscopy and transport mechanism of molybdenum oxide thin films for silicon heterojunction solar cell application
A comprehensive study is reported for temperature-dependent current–voltage (I–V–T),
capacitance–voltage (C–V–T), and impedance spectroscopy measurements carried out in …
capacitance–voltage (C–V–T), and impedance spectroscopy measurements carried out in …
1.5 MeV proton irradiation effects on electrical and structural properties of TiO2/n-Si interface
In this paper, we report the effect of 1.5 MeV proton beam irradiation dose on the structural
and electrical properties of TiO 2 thin films deposited on n–Si substrates. The formation and …
and electrical properties of TiO 2 thin films deposited on n–Si substrates. The formation and …
Temperature dependent negative capacitance behavior of Al/rhodamine-101/n-GaAs Schottky barrier diodes and Rs effects on the C–V and G/ω–V characteristics
In order to explain the origin of negative capacitance, we have investigated the capacitance–
voltage (C–V) and conductance–voltage (G/ω–V) measurements of the Al/rhodamine-101/n …
voltage (C–V) and conductance–voltage (G/ω–V) measurements of the Al/rhodamine-101/n …
Frequency and voltage dependence of electric and dielectric properties of Au/TiO2/n-4H-SiC (metal-insulator-semiconductor) type Schottky barrier diodes
The main electrical and dielectric properties of Au/TiO 2/n-4H-SiC (MIS) type Schottky barrier
diodes (SBDs) have been investigated as functions of frequency and applied bias voltage …
diodes (SBDs) have been investigated as functions of frequency and applied bias voltage …
Analysis of current–voltage characteristics of Al/p-ZnGa2Se4/n-Si nanocrystalline heterojunction diode
The polycrystalline ZnGa2Se4 thin film was prepared by thermal evaporation technique on n-
Si wafer followed by annealing at 700K. Then, the Al/p-ZnGa2Se4/n-Si/Al heterojunction …
Si wafer followed by annealing at 700K. Then, the Al/p-ZnGa2Se4/n-Si/Al heterojunction …
On the mechanism of current-transport in Cu/CdS/SnO2/In–Ga structures
H Uslu, Ş Altındal, I Polat, H Bayrak… - Journal of Alloys and …, 2011 - Elsevier
The structural and optical properties of CdS films deposited by evaporation were
investigated. X-ray diffraction study showed that CdS films were polycrystalline in nature with …
investigated. X-ray diffraction study showed that CdS films were polycrystalline in nature with …