A survey of Gallium Nitride HEMT for RF and high power applications
ASA Fletcher, D Nirmal - Superlattices and Microstructures, 2017 - Elsevier
This paper furnishes a Comprehensive study about an emerging GaN HEMT technology
suitable for RF and high power applications. It plays a vital role in Wireless communication …
suitable for RF and high power applications. It plays a vital role in Wireless communication …
A critical review of design and fabrication challenges in InP HEMTs for future terahertz frequency applications
This article critically reviews the materials, processing and reliability of InP high electron
mobility transistors (InP HEMTs) for future terahertz wave applications. The factors such as …
mobility transistors (InP HEMTs) for future terahertz wave applications. The factors such as …
InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review
This paper reviews the rapid advancements being made in the development of high electron
mobility transistors (HEMTs) on InP substrates for future sub-millimetre wave (30–300 GHz) …
mobility transistors (HEMTs) on InP substrates for future sub-millimetre wave (30–300 GHz) …
GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review
Following the introduction of metamorphic high electron mobility transistors (MHEMTs) 30
years back, there has been a rapid growth in their use in advanced MMIC (monolithic …
years back, there has been a rapid growth in their use in advanced MMIC (monolithic …
Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications
In this article, we present the DC and microwave characteristics of a novel 30 nm T-gate
InAlN/AlN/GaN HEMT with AlGaN back-barrier. The device structure is simulated by using …
InAlN/AlN/GaN HEMT with AlGaN back-barrier. The device structure is simulated by using …
Thermal annealing behavior of InP-based HEMT damaged by proton irradiation
XQ Zhao, B Mei, P Ding, J Zhang, S Meng, C Zhang… - Solid-State …, 2022 - Elsevier
In this paper, the effects of thermal annealing on the radiated InP-based high electron
mobility transistors (HEMTs) is investigated. Proton irradiation is performed with energy of 2 …
mobility transistors (HEMTs) is investigated. Proton irradiation is performed with energy of 2 …
DC and microwave characteristics of Lg 50 nm T-gate InAlN/AlN/GaN HEMT for future high power RF applications
The DC and microwave characteristics of L g= 50 nm T-gate InAlN/AlN/GaN High Electron
Mobility Transistor (HEMT) on SiC substrate with heavily doped n+ GaN source and drain …
Mobility Transistor (HEMT) on SiC substrate with heavily doped n+ GaN source and drain …
Investigation of breakdown performance in = 20 nm novel asymmetric InP HEMTs for future high-speed high-power applications
In this paper, we investigated the breakdown performance of novel nanoscale asymmetric
InP high-electron-mobility transistors (HEMTs). The novel asymmetric InP HEMT features Γ Γ …
InP high-electron-mobility transistors (HEMTs). The novel asymmetric InP HEMT features Γ Γ …
Investigation of DC-RF and breakdown behaviour in Lg= 20 nm novel asymmetric GaAs MHEMTs for future submillimetre wave applications
J Ajayan, T Ravichandran, P Mohankumar… - … -International Journal of …, 2018 - Elsevier
In this work, we systematically investigated the DC-RF and breakdown voltage
characteristics of L g= 20 nm novel asymmetric GaAs metamorphic high electron mobility …
characteristics of L g= 20 nm novel asymmetric GaAs metamorphic high electron mobility …
20 nm high performance novel MOSHEMT on InP substrate for future high speed low power applications
In this work, the DC and RF performance of a 20 nm gate length novel metal oxide
semiconductor high electron mobility transistor (MOSHEMT) on InP substrate is studied …
semiconductor high electron mobility transistor (MOSHEMT) on InP substrate is studied …