Enhanced broadband absorption in nanowire arrays with integrated Bragg reflectors
M Aghaeipour, H Pettersson - Nanophotonics, 2018 - degruyter.com
A near-unity unselective absorption spectrum is desirable for high-performance
photovoltaics. Nanowire (NW) arrays are promising candidates for efficient solar cells due to …
photovoltaics. Nanowire (NW) arrays are promising candidates for efficient solar cells due to …
InGaAs/InP hot electron transistors grown by chemical beam epitaxy
WL Chen, JP Sun, GI Haddad, ME Sherwin… - Applied physics …, 1992 - pubs.aip.org
In this letter, we report on the dc performance of chemical beam epitaxy grown InGaAs/InP
hot electron transistors (HETs). The highest observed differential β (dI C/dI B) is over 100 …
hot electron transistors (HETs). The highest observed differential β (dI C/dI B) is over 100 …
Conduction-band offset and differential-conductance studies of a 20 nm wide, In0. 53Ga0. 47As/InP, single-barrier structure
AW Higgs, HJ Hutchinson, LL Taylor… - Semiconductor …, 1990 - iopscience.iop.org
The authors report here a study of the conduction-band offset and differential conductance of
a 20 nm wide, In 0.53 Ga 0.47 As/InP, single-barrier structure grown by atmospheric …
a 20 nm wide, In 0.53 Ga 0.47 As/InP, single-barrier structure grown by atmospheric …
Determination of the band line-up for strained InGaAs/AlAs heterojunctions using resonant tunnelling diodes
Conduction band offsets for strained InGaAs/AlAs heterointerfaces have been deduced from
a great number of current-voltage measurements on GaAs/AlAs/InGaAs resonant tunnelling …
a great number of current-voltage measurements on GaAs/AlAs/InGaAs resonant tunnelling …
Minority-electron transport through atomic-diffusion-bonded InGaAs/a-Ge/InGaAs structure studied by photodiode characterization
Y Yamada, M Nada, M Uomoto… - Japanese Journal of …, 2019 - iopscience.iop.org
We experimentally investigated minority-electron transport through a wafer-bonded
InGaAs/a-Ge/InGaAs structure fabricated by using atomic-diffusion-bonding technology. The …
InGaAs/a-Ge/InGaAs structure fabricated by using atomic-diffusion-bonding technology. The …
Improved method for depth profiling of multilayer structures
TS Horányi, P Tüttö, G Endrédi - Applied surface science, 1991 - Elsevier
A modified, improved method has been developed for the dissolution of semiconductor
materials containing a GaAlAs layer. This modified method involves the alternate application …
materials containing a GaAlAs layer. This modified method involves the alternate application …
[图书][B] Indium phosphide-based quantum tunneling transistors grown by chemical beam epitaxy
W Chen - 1993 - search.proquest.com
InP-based quantum tunneling transistors were studied systematically using Chemical Beam
Epitaxy (CBE) for the first time. Four transistors were studied, including Hot Electron …
Epitaxy (CBE) for the first time. Four transistors were studied, including Hot Electron …