Neuromorphic devices based on fluorite‐structured ferroelectrics

DH Lee, GH Park, SH Kim, JY Park, K Yang… - InfoMat, 2022 - Wiley Online Library
A continuous exponential rise has been observed in the storage and processing of the data
that may not curtail in the foreseeable future. The required data processing speed and …

Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges

N Zagni, FM Puglisi, P Pavan… - Proceedings of the …, 2023 - ieeexplore.ieee.org
Ferroelectric transistors (FeFETs) based on doped hafnium oxide (HfO2) have received
much attention due to their technological potential in terms of scalability, high-speed, and …

[HTML][HTML] Achieving software-equivalent accuracy for hyperdimensional computing with ferroelectric-based in-memory computing

A Kazemi, F Müller, MM Sharifi, H Errahmouni… - Scientific reports, 2022 - nature.com
Hyperdimensional computing (HDC) is a brain-inspired computational framework that relies
on long hypervectors (HVs) for learning. In HDC, computational operations consist of simple …

Fefet multi-bit content-addressable memories for in-memory nearest neighbor search

A Kazemi, MM Sharifi, AF Laguna… - IEEE Transactions …, 2021 - ieeexplore.ieee.org
Nearest neighbor (NN) search computations are at the core of many applications such as
few-shot learning, classification, and hyperdimensional computing. As such, efficient …

Impact of Oxygen Vacancy on Ferroelectric Characteristics and Its Implication for Wake-Up and Fatigue of HfO2-Based Thin Films

J Chen, C Jin, X Yu, X Jia, Y Peng, Y Liu… - … on Electron Devices, 2022 - ieeexplore.ieee.org
In this article, a phase-field polarization switching model for ferroelectric HfO 2-based thin
films considering oxygen vacancies () has been developed based on the 2-D time …

Examination of the interplay between polarization switching and charge trapping in ferroelectric FET

S Deng, Z Jiang, S Dutta, H Ye… - 2020 IEEE …, 2020 - ieeexplore.ieee.org
In this work, we evaluate the role of polarization switching and charge trapping in the
operation of ferroelectric FET (FeFET) through combined experimental characterization and …

On the channel percolation in ferroelectric FET towards proper analog states engineering

K Ni, S Thomann, O Prakash, Z Zhao… - 2021 IEEE …, 2021 - ieeexplore.ieee.org
Harnessing its analog threshold voltage (V TH) states, ferroelectric FET (FeFET) has found
wide applications as multi-level cells and synaptic weight cells for in-memory computing …

Hdgim: Hyperdimensional genome sequence matching on unreliable highly scaled fefet

HE Barkam, S Yun, PR Genssler, Z Zou… - … , Automation & Test …, 2023 - ieeexplore.ieee.org
This is the first work to present a reliable application for highly scaled (down to merely 3nm),
multi-bit Ferroelectric FET (FeFET) technology. FeFET is one of the up-and-coming …

In-memory nearest neighbor search with fefet multi-bit content-addressable memories

A Kazemi, MM Sharifi, AF Laguna… - … , Automation & Test …, 2021 - ieeexplore.ieee.org
Nearest neighbor (NN) search is an essential operation in many applications, such as
one/few-shot learning and image classification. As such, fast and low-energy hardware …

Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation

MR Sk, S Thunder, D Lehninger, S Sanctis… - ACS Applied …, 2023 - ACS Publications
Indium gallium zinc oxide (IGZO)-based ferroelectric thin-film transistors (FeTFTs) are being
vigorously investigated for being deployed in computing-in-memory (CIM) applications …