We present a critical review of the strategies used in the fabrication of mismatched
semiconductor heterostructures. By using simple concepts derived from the Matthews model …

This article comprehensively reviews the growth of III–V antimony-based semiconductor
materials using metal-organic chemical vapor deposition (MOCVD). It does this by first …

At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …

Infrared photoluminescence (PL) from lnSb, InAs, and InAsl_xSbx (x< 0.3) epitaxial layers
grown by atmospheric pressure organometallic vapor phase epitaxy has been investigated …

Effective band gaps of type-II superlattices (SLs) can cover a wide infrared wavelength
range, even beyond the narrowest band gap of any natural antimonide semiconductor …

Using first-principles band-structure calculations we have studied the valence-band
alignment of InAs/InSb, deducing also the offset at the InAs 1− x Sb x/InAs 1− y Sb y …

The emergence of the Hg~ _xCdxTe as the most important intrinsic semiconductor alloy
system for infrared detection is well established. However, in spite of the achievements in …

There are three main reasons for the study of antimonides, they are the optical [mainly
infrared], electrical [mainly Insb; the Gasb/Inas heterojunction] and structural [mainly …

A high-detectivity infrared photodiode grown using molecular beam epitaxy (MBE) is
discussed. It consisted of a p-'i'-n device embedded in an InAs/sub 0.15/Sb/sub 0.85//InSb …

The development of new epitaxial techniques has given rise to a variety of novel material
combinations. Pseudomorphic combinations where the partners have lattice constants …