Doping effect on the light absorption and photoluminescence of Ge/Si quantum dots in the infrared spectral range

MY Vinnichenko, IS Makhov, RV Ustimenko… - Micro and …, 2022 - Elsevier
The results of comprehensive studies of near-infrared photoluminescence and mid-infrared
equilibrium and photoinduced absorption spectra in structures with Ge/Si quantum dots with …

Effect of Doping and Interband Pumping on the Optical Properties of GeSi/Si Quantum Dot Nanostructures for Infrared Detectors

RV Ustimenko, MY Vinnichenko… - ACS Applied Nano …, 2024 - ACS Publications
Nanostructures with quantum dots based on GeSi solid solution are promising for the
development of optoelectronic devices compatible with modern silicon technology. In this …

Electronic states in vertically ordered Ge/Si quantum dots detected by photocurrent spectroscopy

AI Yakimov, VV Kirienko, VA Armbrister, AA Bloshkin… - Physical Review B, 2014 - APS
We report on intraband photocurrent spectroscopy of sixfold stacked Ge/Si quantum dots
embedded in a Si matrix and aligned along the growth direction. The dots are formed in a …

Strain-induced localization of electrons in layers of the second-type Ge/Si quantum dots

AI Yakimov, VV Kirienko, AA Bloshkin, VA Armbrister… - JETP letters, 2015 - Springer
Electronic states in multilayer Ge/Si heterostructures with different periods of the
arrangement of layers of Ge quantum dots have been studied by the photocurrent …

Temperature evolution of the photoexcited charge carriers dynamics in Ge/Si quantum dots

RM Balagula, AN Sofronov, LE Vorobjev… - Physica E: Low …, 2019 - Elsevier
The kinetics of the photoinduced mid-infrared intraband hole absorption after the short
interband excitation pulse has been studied in an dense array of surfactant-mediated Ge/Si …

Infrared photoluminescence and absorption of Ge/Si quantum dots with different doping levels

MY Vinnichenko, IS Makhov… - … Waves (IRMMW-THz …, 2022 - ieeexplore.ieee.org
The influence of Ge/Si quantum dot doping level on the infrared interband
photoluminescence is experimentally studied for various temperatures and pumping levels …

Temperature depopulation of the GeSi/Si quantum dots with non-equilibrium charge carriers

AN Sofronov, LE Vorobjev, DA Firsov… - Superlattices and …, 2017 - Elsevier
We study the temperature dependencies of equilibrium and photo-induced infrared
absorption in GeSi/Si quantum dots in a wide spectral range. We show that, in spite of the …

Mid-infrared light absorption by photo-excited charge carriers in Ge/Si quantum dots

LE Vorobjev, DA Firsov, VY Panevin… - Journal of Physics …, 2015 - iopscience.iop.org
Mid-infrared optical absorption spectra of Ge/Si quantum dot structures in polarized light
were obtained under conditions of additional interband optical excitation. Photo-excited …

Bidirectional photocurrent of holes in layers of Ge/Si quantum dots

AI Yakimov, VV Kirienko, VA Timofeev… - JETP letters, 2014 - Springer
Spectra of the photocurrent of holes in δ-doped Si layers with Ge quantum dots in weak
external electric fields have been studied. It has been established that the photocurrent of …

Characterization of photoluminescence from Si quantum dots with B δ-doped Ge core

T Maehara, S Fujimori, M Ikeda, A Ohta… - Materials Science in …, 2020 - Elsevier
We formed undoped and B-doped Si quantum dots (Si-QDs) with Ge core on thermally-
grown SiO 2 by controlling the low pressure chemical vapor depositions for the pre-growth of …