The concept of direct band gap group IV materials may offer a paradigm change for Si-
photonics concerning the monolithic implementation of light emitters: the idea is to integrate …

Abstract Germanium nanocrystals (Ge NCs) have recently attracted renewed scientific
interest as environmentally friendlier alternatives to classical II–VI and IV–VI QDs containing …

We report uniaxial tensile strains up to 5.7% along〈 100〉 in suspended germanium (Ge)
wires on a silicon substrate, measured using Raman spectroscopy. This strain is sufficient to …

GeSn alloys are nowadays considered as the most promising materials to build Group IV
laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible …

A silicon-compatible light source is the final missing piece for completing high-speed, low-
power on-chip optical interconnects. In this paper, we present a germanium nanowire light …

The controlled application of strain in crystalline semiconductors can be used to modify their
basic physical properties to enhance performance in electronic and photonic device …

In this work we study, using experiments and theoretical modeling, the mechanical and
optical properties of tensile strained Ge microstructures directly fabricated in a state-of-the …

Monolithically integrated, active photonic devices on Si are key components in Si-based
large-scale electronic-photonic integration for future generations of high-performance, low …

Strain engineering has emerged as a powerful tool to control the properties of electronic and
photonic structures. Strain has a direct impact on the mechanical properties and on the …

Strain engineering is a powerful approach in micro-and optoelectronics to enhance carrier
mobility, tune the bandgap of heterostructures, or break lattice symmetry for nonlinear optics …