There has been a resurgence of complex oxides of late owing to their ferroelectric and
ferromagnetic properties. Although these properties had been recognized decades ago, the …

Switchable polarization can be significantly suppressed in Pb (Zr, Ti) O3 thin films by optical,
thermal, and electrical processes. The optical (thermal) suppression effects occur by biasing …

Growth and characterization of metal‐oxide thin films foster successful development of oxide‐
material‐integrated thin‐film devices represented by metal‐oxide‐semiconductor field‐effect …

Switchable polarization can be suppressed in Pb (Zr, Ti) O, thin films by optical, thermal,
electrical, and reducing processes. The optical suppression effect occurs by biasing the …

A major barrier to the introduction of ferroelectric devices into mass markets remains their
limited reliability due to fatigue. The underlying physical and chemical mechanisms of this …

La‐Sr‐Co‐O/Pb‐La‐Zr‐Ti‐O/La‐Sr‐Co‐O thin‐film capacitors have been grown in various
oxygen ambients by pulsed laser deposition. As the oxygen ambient became more …

Asymmetric polarization switching of Pb (Zr, Ti) O 3 (PZT) thin films with different electrode
configuration has been studied in (La, Sr) CoO 3/Pb (Zr, Ti) O 3/(La, Sr) CoO 3 (LSCO) …

Ferroelectric devices have been developed for future memory devices due to their ideal
memory properties such as non-volatility, fast access time, and low power consumption …

The crystalline quality and ferroelectricity of the Pb (Zr, Ti) O3 (PZT) films deposited on the
metallic LaNiO3 (LNO) and Pt electrodes were comparatively analyzed to investigate the …

The polarization hysteresis loops and the dynamics of domain switching in ferroelectric Pb
(Zr 0.52 Ti 0.48) O 3 (PZT), antiferroelectric PbZrO 3 (PZ) and relaxor-ferroelectric Pb 0.9 La …