In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …

We demonstrate the growth of a low dislocation density, relaxed GaSb bulk layer on a (001)
GaAs substrate. The strain energy generated by the 7.78% lattice mismatch is relieved by a …

Efforts have been made to reduce the density of defects in corundum-structured α-Ga 2 O 3
thin films on sapphire substrates by applying quasi-graded α-(Al x Ga 1− x) 2 O 3 buffer …

The manuscript reports that the initial strain relaxation of highly mismatched GaSb layers
grown on GaAs (001) is governed by the two-dimensional (2D), periodic interfacial misfit …

It is demonstrated that the emission of InAs quantum dots (QDs) capped with GaAsSb can be
extended from 1.28 to 1.6 μ m by increasing the Sb composition of the capping layer from …

Self-organized InAs quantum dashes grown on In 0.53 Ga 0.23 Al 0.24 As∕ In P have been
investigated by chemically sensitive scanning transmission electron microscopy. The …

The excitation power dependence of the ground and excited state transitions in type-II In As-
Ga As 0.78 Sb 0.22 quantum dot structure has been studied. Both transitions exhibit a strong …

The influence of a GaAsSb capping layer on the structural properties of self-assembled
InAs∕ GaAs quantum dots (QDs) is studied on the atomic scale by cross-sectional scanning …

We describe a mathematical model to elucidate the strain energy distribution in the atomic
arrangement resulting from a periodic pure edge, 90° interfacial misfit dislocation (IMF) …

This paper presents an overview of the recent developments in III–V semiconductor lasers
and detectors operating in the 2–3 μ m wavelength range, which are highly desirable for …