Comparative Study of Single and Double Gate All Around Cylindrical FET Structures for High-K Dielectric Materials
R Kaur, B Singh - Transactions on Electrical and Electronic Materials, 2021 - Springer
The performance of conventional MOSFET deteriorates because of the short channel effects
that appears when it is scaled into nm regime. The existing techniques like channel scaling …
that appears when it is scaled into nm regime. The existing techniques like channel scaling …
[PDF][PDF] Simulation-Driven Fabrication and Performance Evaluation of n-MOSFET using Silvaco Athena and Atlas: From Process to Parameters
In this work, an n-channel MOSFET of Silvaco TCAD has been fabricated and analyzed
using commercially available simulation software tools, namely Athena and Atlas. The …
using commercially available simulation software tools, namely Athena and Atlas. The …
[PDF][PDF] Design, Simulation And Analysis of Junction Version Multi-Fin FINFET
K Srinivasa Rao - scholar.archive.org
This paper presents a 3-D statistical simulation study of Multi-fin junction FinFET for different
technology nodes 32nm, 24 nm & 10 nm. For each and every technology node their …
technology nodes 32nm, 24 nm & 10 nm. For each and every technology node their …
Comparative Study of Nano-Scale Standard CMOS versus Finfet
FMK NadeemUddin - 2019 - search.proquest.com
Abstract Planar Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) have been
leading the semiconductor industry for many decades. To continue Moore's law, new …
leading the semiconductor industry for many decades. To continue Moore's law, new …