Formation of extended defects in 4H‐SiC epitaxial growth and development of a fast growth technique
H Tsuchida, M Ito, I Kamata… - physica status solidi (b …, 2009 - Wiley Online Library
This paper surveys extended defects in 4H‐SiC epilayers and reports recent results
concerning fast epitaxial growth. Synchrotron X‐ray topography, transmission electron …
concerning fast epitaxial growth. Synchrotron X‐ray topography, transmission electron …
Silicon carbide as a platform for power electronics
CR Eddy Jr, DK Gaskill - Science, 2009 - science.org
For high-voltage, high-current devices that can be operated at elevated temperatures, silicon
carbide (SiC) has been the material of choice. Efforts to produce single-crystal SiC began 30 …
carbide (SiC) has been the material of choice. Efforts to produce single-crystal SiC began 30 …
Charge-transfer interatomic potential to reproduce 30° partial dislocation movements for 4H-SiC in the surface vicinity and its application to BPD-TED conversion
Abstract 4H-SiC has recently attracted attention as a new power semiconductor material to
replace silicon. One of the challenges impeding its practical use is the elimination of killer …
replace silicon. One of the challenges impeding its practical use is the elimination of killer …
Observation of stacking faults from basal plane dislocations in highly doped 4H-SiC epilayers
NA Mahadik, RE Stahlbush, MG Ancona… - Applied Physics …, 2012 - pubs.aip.org
Stacking fault (SF) expansion from basal plane dislocations (BPDs) confined in highly doped
4H-SiC buffer layers is observed under high-power ultraviolet illumination (> 1000 W/cm 2) …
4H-SiC buffer layers is observed under high-power ultraviolet illumination (> 1000 W/cm 2) …
High performance power module
MK Das, RJ Callanan, H Lin, JW Palmour - US Patent 9,640,617, 2017 - Google Patents
Int. Cl. The present disclosure relates to a power module that has a HOIL 29/6(2006.01)
housing with an interior chamber and a plurality of Switch HOIL 27/06(2006.01) modules …
housing with an interior chamber and a plurality of Switch HOIL 27/06(2006.01) modules …
Conversion of basal plane dislocations to threading edge dislocations in 4H-SiC epilayers by high temperature annealing
X Zhang, H Tsuchida - Journal of applied physics, 2012 - pubs.aip.org
Conversion of basal plane dislocations (BPDs) to threading edge dislocations (TEDs) is
found in 4H-SiC epilayers after being annealed simply at high temperatures. Grazing …
found in 4H-SiC epilayers after being annealed simply at high temperatures. Grazing …
Characterization of dislocations at the emission site by emission microscopy in GaN p–n diodes
Y Ishikawa, Y Sugawara, D Yokoe, K Sato… - Journal of Materials …, 2023 - Springer
The character of dislocations at the emission sites observed in p–n diodes on (0001) GaN by
emission microscopy under reverse biasing is investigated. The dislocation is ac-type …
emission microscopy under reverse biasing is investigated. The dislocation is ac-type …
Basal plane dislocation conversion near the epilayer/substrate interface in epitaxial growth of 4 off-axis 4H–SiC
H Song, TS Sudarshan - Journal of Crystal Growth, 2013 - Elsevier
The conversion of basal plane dislocations (BPDs) is investigated in the epitaxial growth of
4° off-axis SiC by three approaches:(1) regular growth on untreated substrates,(2) growth on …
4° off-axis SiC by three approaches:(1) regular growth on untreated substrates,(2) growth on …
[PDF][PDF] 基于碳化硅衬底的宽禁带半导体外延
开翠红， 王蓉， 杨德仁， 皮孝东 - 人工晶体学报, 2021 - researching.cn
宽禁带半导体具备禁带宽度大, 电子饱和飘移速度高, 击穿场强大等优势, 是制备高功率密度,
高频率, 低损耗电子器件的理想材料. 碳化硅(SiC) 材料具有热导率高, 化学稳定性好 …
高频率, 低损耗电子器件的理想材料. 碳化硅(SiC) 材料具有热导率高, 化学稳定性好 …