[HTML][HTML] Surface transfer doping of diamond: A review

KG Crawford, I Maini, DA Macdonald… - Progress in Surface …, 2021 - Elsevier
Ultra-wide bandgap materials show great promise as a solution to some of the limitations of
current state of the art semiconductor technology. Among these, diamond has exhibited …

Thermal boundary conductance: A materials science perspective

C Monachon, L Weber, C Dames - Annual Review of Materials …, 2016 - annualreviews.org
The thermal boundary conductance (TBC) of materials pairs in atomically intimate contact is
reviewed as a practical guide for materials scientists. First, analytical and computational …

A practical guide to using boron doped diamond in electrochemical research

JV Macpherson - Physical Chemistry Chemical Physics, 2015 - pubs.rsc.org
Conducting, boron doped diamond (BDD), in addition to its superior material properties,
offers several notable attributes to the electrochemist making it an intriguing material for …

Defects in metal–organic frameworks: challenge or opportunity?

DS Sholl, RP Lively - The journal of physical chemistry letters, 2015 - ACS Publications
Metal–organic framework (MOF) materials are nanoporous materials whose crystalline
character has made them attractive targets for synthesis of new materials and potential use …

Recent advances in diamond power semiconductor devices

H Umezawa - Materials Science in Semiconductor Processing, 2018 - Elsevier
Diamond is known as an ultimate material because of its superior properties and it is
expected to be employed in next-generation power electronic devices. Progress in epitaxial …

Edge-of-chaos learning achieved by ion-electron–coupled dynamics in an ion-gating reservoir

D Nishioka, T Tsuchiya, W Namiki, M Takayanagi… - Science …, 2022 - science.org
Physical reservoir computing has recently been attracting attention for its ability to
substantially reduce the computational resources required to process time series data …

[HTML][HTML] Diamond power devices: state of the art, modelling, figures of merit and future perspective

N Donato, N Rouger, J Pernot… - Journal of Physics D …, 2019 - iopscience.iop.org
With its remarkable electro-thermal properties such as the highest known thermal
conductivity (~ 22 W cm− 1 bold dot K− 1 at RT of any material, high hole mobility (> 2000 …

Surface transfer doping of semiconductors

W Chen, D Qi, X Gao, ATS Wee - Progress in Surface Science, 2009 - Elsevier
Surface transfer doping relies on charge separation at interfaces, and represents a valuable
tool for the controlled and nondestructive doping of nanostructured materials or organic …

Normally-off C–H diamond MOSFETs with partial C–O channel achieving 2-kV breakdown voltage

Y Kitabayashi, T Kudo, H Tsuboi… - IEEE Electron …, 2017 - ieeexplore.ieee.org
Diamond has unique physical properties, which show great promise for applications in the
next generation power devices. Hydrogen-terminated (CH) diamond metal-oxide …

CH surface diamond field effect transistors for high temperature (400 C) and high voltage (500 V) operation

H Kawarada, H Tsuboi, T Naruo, T Yamada… - Applied physics …, 2014 - pubs.aip.org
H. Kawarada, H. Tsuboi, T. Naruo, T. Yamada, D. Xu, A. Daicho, T. Saito, A. Hiraiwa; CH
surface diamond field effect transistors for high temperature (400 C) and high voltage (500 …