From wearable sensors to smart implants-–toward pervasive and personalized healthcare
J Andreu-Perez, DR Leff, HMD Ip… - IEEE Transactions on …, 2015 - ieeexplore.ieee.org
Objective: This paper discusses the evolution of pervasive healthcare from its inception for
activity recognition using wearable sensors to the future of sensing implant deployment and …
activity recognition using wearable sensors to the future of sensing implant deployment and …
Leakage characterization of 10T SRAM cell
This paper presents a technique for designing a low-power and variability-aware SRAM cell.
The cell achieves low power dissipation due to its series-connected tail transistor and read …
The cell achieves low power dissipation due to its series-connected tail transistor and read …
High immunity to threshold voltage variability in undoped ultra-thin FDSOI MOSFETs and its physical understanding
Sources responsible for local and inter-die threshold voltage (V t) variability in undoped ultra-
thin FDSOI MOSFETs with a high-k/metal gate stack are experimentally discriminated for the …
thin FDSOI MOSFETs with a high-k/metal gate stack are experimentally discriminated for the …
Effective teaching of the physical design of integrated circuits using educational tools
This paper presents the strategies used for effective teaching and skill development in
integrated circuit (IC) design using project-based learning (PBL) methodologies. It presents …
integrated circuit (IC) design using project-based learning (PBL) methodologies. It presents …
Multi-scale Monte Carlo simulation of soft errors using PHITS-HyENEXSS code system
S Abe, Y Watanabe, N Shibano, N Sano… - … on Nuclear Science, 2012 - ieeexplore.ieee.org
We have proposed a multi-scale Monte Carlo simulation method of neutron induced soft
errors by linking a particle transport code PHITS and a 3-D TCAD simulator HyENEXSS. An …
errors by linking a particle transport code PHITS and a 3-D TCAD simulator HyENEXSS. An …
Accurate simulation of transistor-level variability for the purposes of TCAD-based device-technology cooptimization
In this paper we illustrate how the predictive Technology Computer Aided Design (TCAD)
process device simulation can be used to evaluate process, statistical, and time-dependent …
process device simulation can be used to evaluate process, statistical, and time-dependent …
Analysis of charge deposition and collection caused by low energy neutrons in a 25-nm bulk CMOS technology
S Abe, Y Watanabe - IEEE Transactions on Nuclear Science, 2014 - ieeexplore.ieee.org
Neutron-induced single event upsets (SEUs) in a 25-nm NMOSFET are analyzed using
PHYSERD simulation. We confirm that the secondary H and He ions dominate SEUs above …
PHYSERD simulation. We confirm that the secondary H and He ions dominate SEUs above …
Neutron-induced soft error analysis in MOSFETs from a 65nm to a 25 nm design rule using multi-scale Monte Carlo simulation method
S Abe, Y Watanabe, N Shibano, N Sano… - 2012 IEEE …, 2012 - ieeexplore.ieee.org
We have analyzed terrestrial neutron-induced soft errors in MOSFETs from a 65 nm to a 25
nm design rule by means of multi-scale Monte Carlo simulation using PHITS-HyENEXSS …
nm design rule by means of multi-scale Monte Carlo simulation using PHITS-HyENEXSS …
Variability analysis of stochastic parameters on the electrical performance of on-chip current-mode interconnect system
Current-mode signalling scheme is one of the prominent solutions for high-speed and high
data rate communication in global on-chip interconnects. Advancements in nanofabrication …
data rate communication in global on-chip interconnects. Advancements in nanofabrication …
Impact of nuclear reaction models on neutron-induced soft error rate analysis
S Abe, R Ogata, Y Watanabe - IEEE Transactions on Nuclear …, 2014 - ieeexplore.ieee.org
Terrestrial neutron-induced soft error rate (SER) analyses in the 25-nm design rule MOSFET
are performed by means of multiscale Monte Carlo simulation with different nuclear reaction …
are performed by means of multiscale Monte Carlo simulation with different nuclear reaction …