A comprehensive review on emerging artificial neuromorphic devices

J Zhu, T Zhang, Y Yang, R Huang - Applied Physics Reviews, 2020 - pubs.aip.org
The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

An overview of phase-change memory device physics

M Le Gallo, A Sebastian - Journal of Physics D: Applied Physics, 2020 - iopscience.iop.org
Phase-change memory (PCM) is an emerging non-volatile memory technology that has
recently been commercialized as storage-class memory in a computer system. PCM is also …

[HTML][HTML] Brain-inspired computing with memristors: Challenges in devices, circuits, and systems

Y Zhang, Z Wang, J Zhu, Y Yang, M Rao… - Applied Physics …, 2020 - pubs.aip.org
This article provides a review of current development and challenges in brain-inspired
computing with memristors. We review the mechanisms of various memristive devices that …

[HTML][HTML] Unveiling the structural origin to control resistance drift in phase-change memory materials

W Zhang, E Ma - Materials Today, 2020 - Elsevier
The global demand for data storage and processing is increasing exponentially. To deal
with this challenge, massive efforts have been devoted to the development of advanced …

Phase change memory

HSP Wong, S Raoux, SB Kim, J Liang… - Proceedings of the …, 2010 - ieeexplore.ieee.org
In this paper, recent progress of phase change memory (PCM) is reviewed. The electrical
and thermal properties of phase change materials are surveyed with a focus on the …

Design rules for phase‐change materials in data storage applications

D Lencer, M Salinga, M Wuttig - Advanced Materials, 2011 - Wiley Online Library
Phase‐change materials can rapidly and reversibly be switched between an amorphous
and a crystalline phase. Since both phases are characterized by very different optical and …

Multi-level phase-change memory with ultralow power consumption and resistance drift

B Liu, K Li, W Liu, J Zhou, L Wu, Z Song, SR Elliott… - Science Bulletin, 2021 - Elsevier
By controlling the amorphous-to-crystalline relative volume, chalcogenide phase-change
memory materials can provide multi-level data storage (MLS), which offers great potential for …

Experimental demonstration of supervised learning in spiking neural networks with phase-change memory synapses

SR Nandakumar, I Boybat, M Le Gallo, E Eleftheriou… - Scientific reports, 2020 - nature.com
Spiking neural networks (SNN) are computational models inspired by the brain's ability to
naturally encode and process information in the time domain. The added temporal …

Physical origin of the resistance drift exponent in amorphous phase change materials

M Boniardi, D Ielmini - Applied Physics Letters, 2011 - pubs.aip.org
The resistance of amorphous chalcogenides used in phase change memory devices
increases over time due to structural relaxation (SR). The resistance drift usually follows a …

Collective structural relaxation in phase‐change memory devices

M Le Gallo, D Krebs, F Zipoli, M Salinga… - Advanced Electronic …, 2018 - Wiley Online Library
Phase‐change memory devices are expected to play a key role in future computing systems
as both memory and computing elements. A key challenge in this respect is the temporal …