Laser-produced transient tin plasmas are the sources of extreme ultraviolet (EUV) light at
13.5 nm wavelength for next-generation nanolithography, enabling the continued …

Free-standing multilayer films consisting of Si, Zr, Mo and silicides of both metals have been
fabricated and studied as spectral purity filters (SPF) for extreme ultraviolet (EUV)(13.5 nm) …

We have prepared various low-density Gd targets to investigate the effect of concentration
on the extreme ultraviolet (EUV) radiation near 6.7 ánm and out-of-band emission from laser …

One of the critical issues in lithography using extreme ultraviolet (EUV) light is tin
contamination of the EUV collector mirrors in the tin-based LPP-EUV light source. The …

Extreme ultraviolet spectra from a tin laser produced plasma have been recorded over a
range of angles between 20 and 90 from the target normal. Absolute intensity …

Out-of-band (OOB) radiation (at wavelengths longer than 130 nm⁠) from an extreme
ultraviolet (EUV) light source reduces the precision of lithography. The energy of the OOB …

In this paper, experimental results are presented for the spatial and energy distributions of
charge-discriminated Sn ions ejected from laser-produced plasmas. The plasmas were …

Tin and lithium plasmas emit efficiently in the in-band region (13.5 nm with 2% bandwidth)
necessary for extreme ultraviolet (EUV) lithography. We have made a detailed comparison …

We investigated the role of laser pulse duration and intensity on extreme ultraviolet (EUV)
generation and ion emission from a laser produced Sn plasma. For producing plasmas …

We investigated the role of a guiding magnetic field on extreme ultraviolet (EUV) and ion
emission from a laser produced Sn plasma for various laser pulse duration and intensity. For …