Рассмотрены особенности хемостимулирующего воздействия оксидов металлов на
процесс термооксидирования полупроводников AIIIBV. Установлено, что химическая …

Filament growth is a key aspect in the operation of bipolar resistive random access memory
(RRAM) devices, yet there are conflicting reports in the literature on the direction of growth of …

The value of mh= 0.33 m 0 has been experimentally obtained for hole effective mass in a
tunnel-thin (2–3 nm) SiO 2 film. The use of this value ensures the adequate modelling of a …

Resistive switching in thin HfO 2 films is studied using a metal-insulator-semiconductor
bipolar transistor structure. Using this structure, electron injection into the semiconductor …

The algorithm is suggested for calculating the I–V characteristics of a voltage-or current-
controlled metal-tunnel-thin insulator-semiconductor system. The basic underlying physical …

Теоретически показано, что при замене диоксида кремния в структуре металл-
диэлектрик-полупроводник (МДП) двухслойным изолятором HfO 2 (ZrO 2)/SiO 2 должно …

New directions of development of the scientific school of Yakov Aleksandrovich Ugai “Solid
state chemistry and semiconductors” were considered for the direction “Study of …

The current–voltage characteristics of the metal–insulator–semiconductor tunneling
structures with calcium fluoride are simulated using different theoretical models. The results …

Рассмотрены новые направления развития научной школы Якова Александровича
Угая «Химия твердого тела и полупроводников» в разделе «Материаловедение …

Owing to the improved growth technology of the 1–2nm calcium fluoride films on silicon,
tunnel metal–insulator–semiconductor transistors have been fabricated. Measured output …