Memory effects in complex materials and nanoscale systems

YV Pershin, M Di Ventra - Advances in Physics, 2011 - Taylor & Francis
Memory effects are ubiquitous in nature and are particularly relevant at the nanoscale where
the dynamical properties of electrons and ions strongly depend on the history of the system …

Manipulation of two-dimensional arrays of Si nanocrystals embedded in thin layers by low energy ion implantation

C Bonafos, M Carrada, N Cherkashin, H Coffin… - Journal of applied …, 2004 - pubs.aip.org
In silicon nanocrystal based metal–oxide–semiconductor memory structures, tuning of the
electron tunneling distance between the Si substrate and Si nanocrystals located in the gate …

[图书][B] Silicon nanophotonics: basic principles, present status, and perspectives

L Khriachtchev - 2016 - books.google.com
Photonics is a key technology of this century. The combination of photonics and silicon
technology is of great importance because of the potentiality of coupling electronics and …

[图书][B] Nanostructured thin films and coatings: mechanical properties

S Zhang - 2010 - taylorfrancis.com
Authored by leading experts from around the world, the three-volume Handbook of
Nanostructured Thin Films and Coatings gives scientific researchers and product engineers …

Imaging Si nanoparticles embedded in SiO2 layers by (S) TEM-EELS

S Schamm, C Bonafos, H Coffin, N Cherkashin… - Ultramicroscopy, 2008 - Elsevier
Fabrication of systems in which Si nanoparticles are embedded in a thin silica layer is today
mature for non-volatile memory and opto-electronics applications. The control of the different …

Structural and electrical properties of Ge nanocrystals embedded in SiO2 by ion implantation and annealing

S Duguay, JJ Grob, A Slaoui, Y Le Gall… - Journal of applied …, 2005 - pubs.aip.org
Silicon dioxide (Si O 2) on Si layers with embedded germanium nanocrystals (Ge-ncs) were
fabricated using Ge+ implantation and subsequent annealing. Transmission electron …

Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

P Normand, E Kapetanakis, P Dimitrakis… - Nuclear Instruments and …, 2004 - Elsevier
An overview of recent developments regarding the fabrication and structure of thin silicon
dioxide films with embedded nanocrystals through ultra-low-energy ion-beam-synthesis …

Memory characteristics of MOSFETs with densely stacked silicon nanocrystal layers in the gate oxide synthesized by low-energy ion beam

CY Ng, TP Chen, L Ding, S Fung - IEEE electron device letters, 2006 - ieeexplore.ieee.org
Densely stacked silicon nanocrystal layers embedded in the gate oxide of MOSFETs are
synthesized with Si ion implantation into an SiO/sub 2/layer at an implantation energy of 2 …

Semiconductor nanocrystals in dielectrics: optoelectronic and memory applications of related silicon-based MIS devices

ZJ Horváth - Current Applied Physics, 2006 - Elsevier
Semiconductor nanocrystals in dielectrics: Optoelectronic and memory applications of
related silicon-based MIS devices - ScienceDirect Skip to main contentSkip to article …

Si nanocrystals by ultra-low-energy ion beam-synthesis for non-volatile memory applications

C Bonafos, H Coffin, S Schamm, N Cherkashin… - Solid-State …, 2005 - Elsevier
In this work, we show how to manipulate two-dimensional arrays of Si NCs in thin (⩽ 10nm)
SiO2 layers by ultra-low-energy (⩽ 1keV) ion implantation and subsequent thermal …