Macroporous silicon (MPS) films were yielded by electrochemical anodization of p-type
crystalline silicon in HF: DMF. Following, a Schottky structure was obtained by depositing …

Negative differential resistance (NDR) has been observed in IV characteristics measured
between two aluminum (Al) pads deposited on a layer containing Silicon nanostructures …

Photo-enhanced hysteretic I–V curves have been observed under reverse bias in a pin
structure containing electrochemically etched nanostructured silicon (Si) sandwiched …

The term carrier mobility generally alludes to both electron and hole mobility in
semiconductors. These parameters characterize how quickly an electron and/or hole moves …

An all Si, pin device, consisting of a nanostructured porous Si layer sandwiched between a p-
type crystalline Si and an n-type amorphous Si, exhibits current controlled switching …

Based on the micro-transport mechanism of total dose to nano-strained Si MOS device, the
trapped charge is calculated. By solving the two-dimensional Poisson equation, the channel …

In this work, core-shell ZnO@ SiO2 nanoparticles (NPs) were infiltrated into a macro/meso-
porous silicon (PS) structure, to study its luminescent properties. The core-shell ZnO@ SiO2 …

An analytical model of channel current for the uniaxial strained Si nanometer NMOSFET has
been developed with the degradation due to total dose irradiation taken into consideration …

Based on the coaxial TSV structure, this paper studies the uniaxial strained Si nanoscale n-
channel metaloxide-semiconductor field-effect transistor (NMOSFET) single-particle effect …

Based on the mechanism of charge collection, drift and diffusion, the influence of incident
position, drain bias and incident particle LET (Linear Energy Transfer) value on the charge …