Thermoelectrics of nanowires

R Chen, J Lee, W Lee, D Li - Chemical reviews, 2019 - ACS Publications
The field of thermoelectric research has undergone a renaissance and boom in the past two
and a half decades, largely fueled by the prospect of engineering electronic and phononic …

Bismuth nanowire thermoelectrics

J Kim, W Shim, W Lee - Journal of Materials Chemistry C, 2015 - pubs.rsc.org
During the past 20 years, the thermoelectric properties of nanostructures such as one-
dimensional bismuth (Bi) platforms have prompted the development of a wide variety of …

Diameter-dependent thermoelectric figure of merit in single-crystalline Bi nanowires

J Kim, S Lee, YM Brovman, P Kim, W Lee - Nanoscale, 2015 - pubs.rsc.org
The diameter-dependent thermoelectric properties of individual single-crystalline Bi
nanowires grown by the on-film formation of nanowires method have been investigated. The …

Weak antilocalization effect and high-pressure transport properties of ScPdBi single crystal

J Zhang, Z Hou, C Zhang, J Chen, P Li, Y Wen… - Applied Physics …, 2019 - pubs.aip.org
Half-Heusler compounds have attracted considerable attention due to their fantastic physical
properties that include topological effects, Weyl fermions, unusual magnetism, and …

Confinement effects, surface effects, and transport in Bi and Bi1− xSbx semiconducting and semimetallic nanowires

K Vandaele, M Otsuka, Y Hasegawa… - Journal of Physics …, 2018 - iopscience.iop.org
Hicks and Dresselhaus predicted that quantum well and nanowire thermoelectric materials
could show a meaningful enhancement of the heat-to-electricity conversion efficiency …

Weak Antilocalization Effect of Topological Crystalline Insulator Pb1–xSnxTe Nanowires with Tunable Composition and Distinct {100} Facets

M Safdar, Q Wang, Z Wang, X Zhan, K Xu, F Wang… - Nano Letters, 2015 - ACS Publications
Pb1–x Sn x Te is a unique topological crystalline insulator (TCI) that undergoes a
topological phase transition from topological trivial insulator to TCI with the change of Sn …

Resistive switching in Ga-and Sb-doped ZnO single nanowire devices

B Wang, T Ren, S Chen, B Zhang, R Zhang… - Journal of Materials …, 2015 - pubs.rsc.org
Resistive random access memory (RRAM) is one of the most promising nonvolatile memory
technologies because of its high potential to replace traditional charge-based memory …

Comprehensive analysis for the high field magneto-conductivity of Bi2Te3 single crystal

Y Kumar, R Sultana, VPS Awana - Physica B: Condensed Matter, 2021 - Elsevier
Here, we report the magneto-conductivity (up to 14 T and down to 5 K) analysis of Bi 2 Te 3
single-crystal. A sharp magneto-conductivity (MC) rise (inverted v-type cusp) is observed …

In situ video-STM studies of the mechanisms and dynamics of electrochemical bismuth nanostructure formation on Au

H Matsushima, SW Lin, S Morin… - Faraday Discussions, 2016 - pubs.rsc.org
The microscopic mechanisms of Bi electrodeposition on Au (111) and Au (100) electrodes in
the overpotential regime were studied by in situ scanning tunneling microscopy with high …

Influence of surface states and size effects on the Seebeck coefficient and electrical resistance of Bi 1− x Sb x nanowire arrays

M Cassinelli, S Müller, KO Voss, C Trautmann… - Nanoscale, 2017 - pubs.rsc.org
The Seebeck coefficient and electrical resistance of Bi1− xSbx nanowire arrays
electrodeposited in etched ion-track membranes have been investigated as a function of …