Silicon-carbide (SiC) semiconductor power electronics for extreme high-temperature environments
J Hornberger, AB Lostetter… - … (IEEE Cat. No …, 2004 - ieeexplore.ieee.org
This paper discusses the current state of SiC electronics research at Arkansas Power
Electronics International, Inc.(APEI) with regard to high-temperature environments and …
Electronics International, Inc.(APEI) with regard to high-temperature environments and …
Wide bandgap technologies and their implications on miniaturizing power electronic systems
HA Mantooth, MD Glover… - IEEE Journal of emerging …, 2014 - ieeexplore.ieee.org
The current state of wide bandgap device technology is reviewed and its impact on power
electronic system miniaturization for a wide variety of voltage levels is described. A synopsis …
electronic system miniaturization for a wide variety of voltage levels is described. A synopsis …
Modeling of wide bandgap power semiconductor devices—Part I
HA Mantooth, K Peng, E Santi… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
Wide bandgap power devices have emerged as an often superior alternative power switch
technology for many power electronic applications. These devices theoretically have …
technology for many power electronic applications. These devices theoretically have …
Power conversion with SiC devices at extremely high ambient temperatures
This paper evaluates the capability of SiC power semiconductor devices, in particular JFET
and Schottky barrier diodes (SBD) for application in high-temperature power electronics. SiC …
and Schottky barrier diodes (SBD) for application in high-temperature power electronics. SiC …
Silicon carbide power MOSFET model and parameter extraction sequence
TR McNutt, AR Hefner, HA Mantooth… - … on Power Electronics, 2007 - ieeexplore.ieee.org
A compact circuit simulator model is used to describe the performance of a 2-kV, 5-A 4-H
silicon carbide (SiC) power DiMOSFET and to perform a detailed comparison with the …
silicon carbide (SiC) power DiMOSFET and to perform a detailed comparison with the …
Third quadrant conduction loss of 1.2–10 kV SiC MOSFETs: Impact of gate bias control
The third quadrant (3rd-quad) conduction of power MOSFETs involves competing current
sharing between the metal-oxide-semiconductor (MOS) channel and the body diode …
sharing between the metal-oxide-semiconductor (MOS) channel and the body diode …
Measuring terminal capacitance and its voltage dependency for high-voltage power devices
The switching behavior of semiconductor devices responds to charge/discharge
phenomenon of terminal capacitance in the device. The differential capacitance in a …
phenomenon of terminal capacitance in the device. The differential capacitance in a …
Real-time hardware-in-the-loop emulation of high-speed rail power system with SiC-based energy conversion
T Liang, Q Liu, VR Dinavahi - IEEE Access, 2020 - ieeexplore.ieee.org
Real-time device-level hardware-in-the-loop (HIL) emulation of a complete high-speed rail
system is challenging due to its complex modeling and high computing demand. With higher …
system is challenging due to its complex modeling and high computing demand. With higher …
AlGaN/GaN-based lateral-type Schottky barrier diode with very low reverse recovery charge at high temperature
We have demonstrated the lateral multifinger-type Schottky barrier diode (SBD) with
bonding pad over active structure fabricated on the AlGaN/GaN heterostructure prepared on …
bonding pad over active structure fabricated on the AlGaN/GaN heterostructure prepared on …
Parameter extraction procedure for a physics-based power SiC Schottky diode model
R Fu, AE Grekov, K Peng, E Santi - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
A detailed parameter extraction procedure for a simple physics-based power silicon carbide
(SiC) Schottky diode model is presented. The developed procedure includes the extraction …
(SiC) Schottky diode model is presented. The developed procedure includes the extraction …