GaSb nanowires were synthesized on c-plane sapphire substrates by gold-mediated vapor–
liquid–solid (VLS) growth using a metalorganic chemical vapor deposition process. A …

Epitaxial GaSb (100) semiconductor films were prepared in an AIX200 reactor using
triethylantimony and triethylgallium as precursors. MOVPE growth of (100) surfaces was …

We report gold-free growth of vertically aligned InAs/GaSb heterostructure nanowires (NWs)
on Si (111) substrate by metal organic chemical vapor deposition technique. The effect of …

The potential application of [t-Bu2GaSbEt2] 2 (1) to serve as a single-source precursor for
the deposition of GaSb films was investigated in detail. Crystalline GaSb films (sphalerite …

Thermal decomposition reactions of the Lewis acid–base adducts t-Bu3Ga–Sb (t-Bu) 31 and
t-Bu3Ga–Sb (i-Pr) 32 were investigated at different temperatures. Both adducts lead to the …

Tailor-made single source precursors of the type [R2GaSbR′ 2] x (R, R′= alkyl) have
been prepared by a novel synthetic pathways. According to their very low vapor pressures, a …

Crystalline GaSb films were deposited using the tailor-made single-source precursor [t-
Bu2GaSbEt2] in a specifically designed MOCVD reactor under HV conditions at low …

Abstract Al x Ga 1− x Sb films in the regime 0× 0.25 have been grown by metalorganic
chemical vapor deposition on GaAs and GaSb substrates using TMAl, TMGa, and TMSb …

În lucrarea dată se prezintă pentru discuţie rezultatele studierii efectelor optice şi de
fotoconducţie al antimonidului de galiu nedopat. S-au studiat efectele de transparenţă optică …

PHILOSOPHIAE DOCTOR Page 1 1 Atmospheric Pressure Metal-Organic Vapour Phase
Epitaxial Growth of InAs/GaSb Strained Layer Superlattices By Senzo Simo Miya Submitted in …