Progress in Contact, Doping and Mobility Engineering of MoS2: An Atomically Thin 2D Semiconductor
Atomically thin molybdenum disulfide (MoS2), a member of the transition metal
dichalcogenide (TMDC) family, has emerged as the prototypical two-dimensional (2D) …
dichalcogenide (TMDC) family, has emerged as the prototypical two-dimensional (2D) …
Perspective of 2D integrated electronic circuits: Scientific pipe dream or disruptive technology?
Within the last decade, considerable efforts have been devoted to fabricating transistors
utilizing 2D semiconductors. Also, small circuits consisting of a few transistors have been …
utilizing 2D semiconductors. Also, small circuits consisting of a few transistors have been …
A WSe 2 vertical field emission transistor
We report the first observation of a gate-controlled field emission current from a tungsten
diselenide (WSe2) monolayer, synthesized by chemical-vapour deposition on a SiO2/Si …
diselenide (WSe2) monolayer, synthesized by chemical-vapour deposition on a SiO2/Si …
Electrode‐Induced Self‐Healed Monolayer MoS2 for High Performance Transistors and Phototransistors
Contact engineering for monolayered transition metal dichalcogenides (TMDCs) is
considered to be of fundamental challenge for realizing high‐performance TMDCs‐based …
considered to be of fundamental challenge for realizing high‐performance TMDCs‐based …
Reversible hysteresis inversion in MoS2 field effect transistors
The origin of threshold voltage instability with gate voltage in MoS2 transistors is poorly
understood but critical for device reliability and performance. Reversibility of the temperature …
understood but critical for device reliability and performance. Reversibility of the temperature …
Vertical transistors based on 2D materials: Status and prospects
Two-dimensional (2D) materials, such as graphene (Gr), transition metal dichalcogenides
(TMDs) and hexagonal boron nitride (h-BN), offer interesting opportunities for the …
(TMDs) and hexagonal boron nitride (h-BN), offer interesting opportunities for the …
Ambipolar MoS2 Transistors by Nanoscale Tailoring of Schottky Barrier Using Oxygen Plasma Functionalization
One of the main challenges to exploit molybdenum disulfide (MoS2) potentialities for the
next-generation complementary metal oxide semiconductor (CMOS) technology is the …
next-generation complementary metal oxide semiconductor (CMOS) technology is the …
Enhanced NO2 Sensitivity in Schottky-Contacted n-Type SnS2 Gas Sensors
W Yan, C Lv, D Zhang, Y Chen, L Zhang… - … applied materials & …, 2020 - ACS Publications
Layered materials are highly attractive in gas sensor research due to their extraordinary
electronic and physicochemical properties. The development of cheaper and faster room …
electronic and physicochemical properties. The development of cheaper and faster room …
Conductive atomic force microscopy of semiconducting transition metal dichalcogenides and heterostructures
Semiconducting transition metal dichalcogenides (TMDs) are promising materials for future
electronic and optoelectronic applications. However, their electronic properties are strongly …
electronic and optoelectronic applications. However, their electronic properties are strongly …
High‐Performance Monolayer MoS2 Field‐Effect Transistors on Cyclic Olefin Copolymer‐Passivated SiO2 Gate Dielectric
Trap states of the semiconductor/gate dielectric interface give rise to a pronounced
subthreshold behavior in field‐effect transistors (FETs) diminishing and masking intrinsic …
subthreshold behavior in field‐effect transistors (FETs) diminishing and masking intrinsic …