MC Tu, HY Ueng, YC Wang - IEEE Transactions on Electron …, 2009 - ieeexplore.ieee.org
An InGaP heterojunction-bipolar-transistor (HBT) power amplifier with the best linearity and high reliability is presented in this paper for use in wireless digital mobile communication …
NL Wang, WA Strifler - US Patent 7,345,547, 2008 - Google Patents
The embodiments of the present invention include a bias circuit for a power-amplifying device, which receives and amplifies an input RF signal having a series of RF cycles within …
JV Bellantoni - US Patent 7,239,858, 2007 - Google Patents
(56) References Cited operating according to clock signals from a crystal oscilla tor. The RFID reader further includes a linearized power US PATENT DOCUMENTS amplifier …
The CDMA receiver sensitivity can be significantly degraded by the cross modulation distortion (XMD), which is generated primarily by the LNA. To analyze XMD, this dissertation …
C Wang, HT Hsu, HC Shu, YA Liu… - 2004 IEE Radio …, 2004 - ieeexplore.ieee.org
An additional thin high-doping layer within the collector of InGaP/GaAs HBTs has been designed and fabricated to improve the Kirk effect threshold current, cutoff frequency, and …
E Peral - US Patent 7,634,198, 2009 - Google Patents
(57) ABSTRACT A distortion circuit is provided for correcting the distortion from a nonlinear circuit element by generating a frequency dependent signal having a sign opposite to the …
C Wang, HT Hsu, HC Shu, Y Hsin - IEEE Electron Device …, 2004 - ieeexplore.ieee.org
Improved power linearity of InGaP/GaAs heterojunction bipolar transistors (HBTs) with collector design is reported. The collector design is based on nonuniform collector doping …
JH Tsai, HY Yang, CC Kuo… - 2007 IEEE/MTT-S …, 2007 - ieeexplore.ieee.org
This paper presents a miniature 38-48 GHz sub-harmonic transmitter with post-distortion linearization using a 0.15-μm GaAs HEMT process. The transmitter, which integrates a sub …
JL Su, HC Tseng - IEEE Transactions on Device and Materials …, 2017 - ieeexplore.ieee.org
In this paper, the characteristics of InGaP/GaAs collector-up (C-up) pnp and npn heterojunction bipolar transistors (HBTs) with the graded InGaAs base and the nonuniform …