Ultrawide bandgap (UWBG) semiconductors, including Ga2O3, diamond, Al x Ga1–x N/AlN,
featuring bandgaps greater than 4.4 eV, hold significant promise for solar-blind ultraviolet …

Recently, pulsed laser deposition (PLD) technology makes viable the epitaxial growth of
group III-nitrides on thermally active substrates at low temperature. The precursors …

Study of Aluminum nitride (AlN) thin film deposited on silicon wafer and glass substrates by
DC magnetron sputtering technique at different power variation. The X-ray diffraction and …

Aluminum nitride (AlN) films were deposited on a variety of substrates (glass, Si, oxidized Si,
Al–SiO 2–Si, Cr–SiO 2–Si, and Au–Cr–SiO 2–Si) by radio frequency (RF) magnetron …

A comprehensive study on the complete process for the fabrication of AlN-based MEMS
sensors and actuators is presented. Varying the bias voltage during the reactive rf sputtering …

In Part I of this study (Cheng et al. in Int J Thermophys 37: 62, 2016), the reflectance and
transmittance of dense ceramic plates were measured at wavelengths from 0.4\upmu m μ m …

We report structural and optical properties of aluminum nitride (AlN) thin films prepared by
RF magnetron sputtering. A ceramic AlN target was used to sputter deposit AlN films without …

AlN is an interesting material with some excellent properties like high hardness (> 11GPa),
high temperature stability (> 2400° C), good electrical resistivity (> 1010Ωcm), and good …

In this paper, dependence of N2 pressure on the crystal structure and surface quality of AlN
thin films deposited via pulsed laser ablation of Al target in the environment of N2 at room …

We presented a comprehensive thermodynamic study of the gas-phase chemical reaction
mechanism of the AlN growth by high-temperature metal-organic chemical vapor deposition …