Memory devices are described along with manufacturing methods. A memory device as
described herein includes a bottom electrode and a first phase change layer comprising a …

Embodiments of the present disclosure relate to advanced polishing pads with tunable
chemical, material and structural properties, and new methods of manufacturing the same …

Embodiments described herein relate to integrated abrasive (IA) polishing pads, and
methods of manufacturing IA polishing pads using, at least in part, surface functionalized …

(57) ABSTRACT Related US Application Data Embodiments of collimators for use in
Substrate processing (60) Provisional application No. 62/085,009, filed on Nov. chambers …

Embodiments described herein relate to methods of detect ing a polishing endpoint using
one or more sensors embed ded in the polishing material of a polishing pad, the polish ing …

(57) ABSTRACT A layer of phase change material with silicon or another semiconductor, or
a silicon-based or other semiconductor based additive, is formed using a composite Sputter …

In some implementations described herein, a collimator that is biasable is provided. The
ability to bias the collimator allows control of the electric field through which the sputter …

A polishing article manufacturing system includes a feed section and a take-up section, the
take-up section comprising a supply roll having a polishing article disposed thereon for a …

A memory cell structure, including a substrate having a via therein bound at first and second
ends thereof by electrodes. The via is coated on side surfaces thereof with GST material …

( 12 ) United States Design Patent ( 10 ) Patent No . : Page 1 USOOD859333S ( 12 ) United
States Design Patent ( 10 ) Patent No . : Riker et al . ( 45 ) Date of Patent : US D859 , 333 S …