Tuned Transport Path of Perovskite MAPbI3‐based Memristor Structure

A mini review of recently progress on halide perovskite memristor devices: materials sciences, challenges and applications

W Peixiong, C Xiang, P Xiaoxin, J Bowen… - Materials Today …, 2024 - Elsevier
Halide perovskite memristors have emerged as promising contenders for the next-
generation memory devices owing to their advantages, including facile and low-cost …
被引用次数：2 相关文章 所有 2 个版本

Self-rectifying resistive switching in MAPbI3-based memristor device

PQ Pham, TQT Vo, DK Le, CT Huynh, TT Ngo… - Applied Physics …, 2024 - pubs.aip.org
A critical stage in developing high-density memristors is addressing the sneak current within
the crossbar architecture. One of the effective strategies to endow the memristive cell with …
被引用次数：2 相关文章 所有 4 个版本

Bipolar Resistive Switching Behavior in All Inorganic Lead-Free Double-Perovskite CsSnI Thin Film for Low-Power ReRAM

M Kumar, H Sharma, R Srivastava… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
Recent advancement in the artificial intelligence and surge in the availability of complex
information have accelerated the exploration of advanced information processing and …
被引用次数：1 相关文章

Volatile Switching in Flexible Hybrid Halide Perovskite Memristors

JM Fernandes, N Xavier, S Roy… - 2024 IEEE International …, 2024 - ieeexplore.ieee.org
Resistive switching property in hybrid organic-inorganic halide perovskites has garnered
significant interest in recent years due to their mixed ionic-electronic conductivity, promising …
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[PDF] researchgate.net

[PDF][PDF] Bipolar Resistive Switching Behavior in All Inorganic Lead-Free Double-Perovskite Cs2SnI6 Thin Film for Low-Power ReRAM

M Kumar, H Sharma, R Srivastava, S Kumar - researchgate.net
Recent advancement in the artificial intelligence and surge in the availability of complex
information have accelerated the exploration of advanced information processing and …
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