In this work, we report on self-limiting growth of InN thin films at substrate temperatures as
low as 200 C by hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD). The …

Indium nitride InN nanoparticles NPs suspension prepared by Nd: YAG laser ablation of
indium target submerged under ammonium hydroxide. The Scanning electron microscopy, X …

Indium nitride (InN) thin films were deposited on Si (111) substrate by plasma-assisted
reactive evaporation with a variable radio frequency (RF) power supply. The effects of RF …

In this work, nanostructured InN thin films were deposited on (100) silicon substrates using
reactive sputtering technique. Moreover, two different nitride (GaN or AlN) films were …

The structure and optical properties of InN thin film grown on 6H-SiC by reactive radio
frequency magnetron sputtering were investigated. X-ray diffraction measurement shows …

Nitrogen rich indium nitride (InN) thin films were deposited on anisotropic silicon [Si (110)]
and 6H-silicon carbide (6H-SiC) substrates by reactive radio frequency sputtering technique …

We report on the structural and optical characteristics of heterostructure InN/PSi/n-type Si
(110) grown by radio frequency (RF) sputtering at room temperature. Photo-electrochemical …

Nanosized BiTaO4 and BiNbO4 were prepared by the citrate method. The electronic and
optical properties of BiTaO4 and BiNbO4 have been investigated by means of photo …

InN nanocrystals were grown on glass substrate by plasma assisted reactive evaporation
technique and the quality was compared with InN on Si (111) substrate. Single phase InN …

The optical properties of InN are investigated theoretically by employing the projector
augmented wave (PAW) method within Green's function and the screened Coulomb …