This paper presents an overview of the rapid progress being made in the development of
InP based devices for high speed applications. Over the past few decades, major aero …

After 50 years of Moore's Law, Si CMOS, the mainstream logic technology, is on a course of
diminishing returns. The use of new semiconductor channel materials with improved …

The outstanding electron transport properties of InGaAs and InAs semiconductor materials,
makes them attractive candidates for future nano-scale CMOS. In this paper, the ON state …

Monolithic integration of III–V semiconductor lasers with Si circuits can reduce cost and
enhance performance for optical interconnects dramatically. We propose and investigate …

We report CMOS-compatible n-channel InGaAson-insulator FinFETs obtained using a
replacement metal gate fabrication flow. The fabricated devices feature 12-nm-thick SiN x …

In the last few years, as Si electronics faces mounting difficulties to maintain its historical
scaling path, transistors based on III-V compound semiconductors have emerged as a …

We present a physics-based model of charge density and capacitance for III–V channel
double-gate nMOSFETs. The developed model accurately accounts for the impact of …

In the spirit of quantum drift-diffusion formalism, we propose a core compact model for low-
effective mass channel common double-gate MOSFET. In contrast to the existing models …

In this paper, we present a compact model for semiconductor charge and quantum
capacitance in III-V channel FETs. With III-V being viewed as the most promising candidate …

Frequency (100 Hz≤ f≤ 1 MHz) and temperature (-50≤ T 20° C) characteristics of low
interface state density D it high-κ gate-stacks on n-InAs have been investigated …