Recently developed high-permittivity (k) materials have reopened the door to Ge as a
channel material in metal-oxide-semiconductor field-effect transistors (MOSFETs). High-k/Ge …

The dependence of electron mobility on strain, channel direction, and substrate orientation
is theoretically studied for the germanium n-channel metal-oxide-semiconductor field-effect …

The first observations of plastically deformed germanium made immediately clear that
dislocations introduced during a high-temperature deformation create acceptor states [1–5] …

As an outstanding two-dimensional (2D) semiconductor among III–V compounds, InAs has
attracted significant attention due to its much higher electron mobility than silicon and …

In this work, the scalability of alternative channel material double gate nano nMOSFETs has
been investigated by the mean of semi-analytical models of Ion/Ioff currents, accounting for …

For the formation of nano-scale Ge channels in vertical Gate-all-around field-effect
transistors (vGAAFETs), the selective isotropic etching of Ge selective to Ge0. 8Si0. 2 was …

We report on the lattice location of ion implanted Fe, Cu, and Ag impurities in germanium
from a combined approach of emission channeling experiments and ab initio total energy …

This paper presents a general study on the germanium (Ge) condensation technique to
assess its potential, issues and applications for advanced metal oxide semiconductor field …

High source/drain concentration level, ultrashallow junction, and high-mobility channel are
important for the requirements of nanoscale transistors. Microwave processing of …

We report on emission channeling experiments to determine the lattice location and the
thermal stability of implanted I 111 n atoms in Ge. The majority of the In atoms was found on …