Large-signal modeling of GaN HEMTs using hybrid GA-ANN, PSO-SVR, and GPR-based approaches
This article presents an extensive study and demonstration of efficient electrothermal large-
signal GaN HEMT modeling approaches based on combined techniques of Genetic …
signal GaN HEMT modeling approaches based on combined techniques of Genetic …
Comprehensive investigation and comparative analysis of machine learning-based small-signal modelling techniques for GaN HEMTs
A number of machine learning (ML) algorithm based small signal modeling of Gallium
Nitride (GaN) High Electron Mobility Transistors (HEMTs) have been reported in literature …
Nitride (GaN) High Electron Mobility Transistors (HEMTs) have been reported in literature …
Continuous-mode inverse class-GF power amplifier with second-harmonic impedance optimization at device input
In this article, a continuous-mode inverse class GF (CCGF-1) power amplifier is introduced
based on a new closed-form expression for the drain current. This analytical expression is …
based on a new closed-form expression for the drain current. This analytical expression is …
A reflection-aware unified modeling and linearization approach for power amplifier under mismatch and mutual coupling
The behavior of a power amplifier (PA) is substantially affected by the output mismatch and
mutual coupling in modern compact transmitters. To date, different works in the literature …
mutual coupling in modern compact transmitters. To date, different works in the literature …
Gallium nitride (GaN) high-electron-mobility transistors with thick copper metallization featuring a power density of 8.2 W/mm for Ka-band applications
YC Lin, SH Chen, PH Lee, KH Lai, TJ Huang… - Micromachines, 2020 - mdpi.com
Copper-metallized gallium nitride (GaN) high-electron-mobility transistors (HEMTs) using a
Ti/Pt/Ti diffusion barrier layer are fabricated and characterized for Ka-band applications. With …
Ti/Pt/Ti diffusion barrier layer are fabricated and characterized for Ka-band applications. With …
Comparative analysis of nonlinear behavioral models for GaN HEMTs based on machine learning techniques
B Liu, J Cai - International Journal of Numerical Modelling …, 2024 - Wiley Online Library
A variety of novel behavioral modeling techniques have been reported to accurately capture
the nonlinear characteristics of GaN devices. For the purpose of describing GaN HEMT large …
the nonlinear characteristics of GaN devices. For the purpose of describing GaN HEMT large …
Compact 20-W GaN internally matched power amplifier for 2.5 GHz to 6 GHz jammer systems
MP Lee, S Kim, SJ Hong, DW Kim - Micromachines, 2020 - mdpi.com
In this paper, we demonstrate a compact 20-W GaN internally matched power amplifier for
2.5 to 6 GHz jammer systems which uses a high dielectric constant substrate, single-layer …
2.5 to 6 GHz jammer systems which uses a high dielectric constant substrate, single-layer …
Efficient Amplification of Large‐Signal Spoof Surface Plasmon Polaritons in a Subwavelength Size
The advancement of communication systems demands ever‐smaller sizes, leading to the
integration of more circuits in compact forms. A promising solution lies in Spoof Surface …
integration of more circuits in compact forms. A promising solution lies in Spoof Surface …
Matching network efficiency: the new old challenge for millimeter-wave silicon power amplifiers
Recently emerging applications in the millimeter-wave (mm-wave) frequency range, such as
automotive radar, satellite communications, 5G, 6G, and beyond, have brought new and …
automotive radar, satellite communications, 5G, 6G, and beyond, have brought new and …
Demonstration of CAD deployability for GPR based small-signal modelling of GaN HEMT
This paper develops and presents a CAD deployability of small-signal model of Gallium
Nitride (GaN) High Electron Mobility Transistor (HEMT). First, a Gaussian Process …
Nitride (GaN) High Electron Mobility Transistor (HEMT). First, a Gaussian Process …