The requirements for ever-increasing volumes of data storage have urged intensive studies
to find feasible means to satisfy them. In the long run, new device concepts and technologies …

Optimization of equipment structure and process conditions is essential to obtain thin films
with the required properties, such as film thickness, trapped charge density, leakage current …

This review examines the performance variations of pristine and doped high‐k materials
deposited using atomic layer deposition (ALD). This paper explores the fundamental …

Charge-trap-assisted memory thin-film transistors (CTM-TFTs) using the engineered Al-
doped HfO2 (Al: HfO2) CTL and In–Ga–Zn–O channel were fabricated and characterized to …

The improvement in the charge storage characteristics in a non-volatile memory (NVM)
device employing an ultraviolet (UV)-treated hafnium oxide (HfO 2) layer as the charge …

This study presents a novel pH sensor platform utilizing charge-trap-flash-type metal oxide
semiconductor field-effect transistors (CTF-type MOSFETs) for enhanced sensitivity and self …

Hafnia has emerged as a promising material for charge-trapping memory. However,
enhancing its trapping performance remains a significant research challenge. In this work …

In this work, a summary of our recent studies on the potential of HfO2/AhO3 nanolaminated
stacks to be implemented as charge storage layers in CTMs is presented. The stacks are …