High-voltage GaN HEMT with self-biased P-GaN VLD layer for improved breakdown voltage and figure of merit
M Kong, N Yu, Y Zhang, Z Cheng, B Zhang, B Yi… - Microelectronics …, 2025 - Elsevier
In this article, a novel high-voltage GaN HEMT device with a self-biased multiple stepped P-
GaN cap variation lateral doping (VLD) layer is proposed for the first time. The stepped P …
GaN cap variation lateral doping (VLD) layer is proposed for the first time. The stepped P …
Off-State Stress Effects in AlGaN/GaN HEMTs: Investigation of high-voltage off-state stress impact on performance of and its retention in hybrid-drain ohmic gate …
I Krsic - 2023 - diva-portal.org
High electron mobility transistors (HEMTs) realized using AlxGa1-xN/GaN are relatively new
technology which is prominent for high-speed and high-power applications. Some of the …
technology which is prominent for high-speed and high-power applications. Some of the …