K Tamersit - AEU-International Journal of Electronics and …, 2020 - Elsevier
In this paper, new graphene nanoribbon tunnel field-effect transistors (GNRTFETs) endowed with specific doping profiles are proposed, assessed, and compared with the conventional …
N Shao, E Wickstrom, B Panchapakesan - Nanotechnology, 2008 - iopscience.iop.org
Recent reports have shown that nanoscale electronic devices can be used to detect a change in electrical properties when receptor proteins bind to their corresponding …
K Tamersit - AEU-International Journal of Electronics and …, 2020 - Elsevier
In this paper, a novel junctionless carbon nanotube field-effect transistor (JL-CNTFET) endowed with a split coaxial gate (SCG) is proposed through a rigorous self-consistent …
The properties of electronic devices based on carbon nanotube networks (CNTNs) depend on the carbon nanotube (CNT) deposition method used, which can yield a range of network …
R Yousefi, K Saghafi… - IEEE transactions on …, 2010 - ieeexplore.ieee.org
In this paper, we investigate the transport properties of carbon nanotube field-effect transistors (CNTFETs), with a nonequilibrium Green's function (NEGF) method. Tunneling …
In this work, a carbon nanotube junctionless tunnel field-effect transistor has been proposed and investigated. The presented structure uses two isolated gates with the same work …
K Tamersit - Superlattices and Microstructures, 2019 - Elsevier
In this paper, a quantum simulation study that highlights the role of linearly graded binary metal alloy (LGBMA) gate in improving the performance of coaxially gated junctionless …
P Pourian, R Yousefi, SS Ghoreishi - Superlattices and Microstructures, 2016 - Elsevier
Numerical studies on junctionless carbon nanotube field-effect transistors (JL-CNTFETs) have indicated that these devices produce more ON current than silicon junctionless …
K Alam - IEEE transactions on nanotechnology, 2009 - ieeexplore.ieee.org
The effects of uniaxial strain on the bandgap and performance of a top gate graphene nanoribbon (GNR) on insulator transistor are studied using pi-orbital basis 3-D ballistic …