Despite technical efforts and upgrades, advances in complementary metal–oxide–
semiconductor circuits have become unsustainable in the face of inherent silicon limits. New …

Polymorphic 2D materials allow structural and electronic phase engineering, which can be
used to realize energy-efficient, cost-effective, and scalable device applications. The phase …

Large-scale growth of transition metal dichalcogenides and their subsequent integration
with compound semiconductors is one of the major obstacles for two-dimensional materials …

Vacancy defect engineering has been well leveraged to flexibly shape comprehensive
physicochemical properties of diverse catalysts. In particular, growing research effort has …

Semiconductor devices based on two-dimensional (2D) transition metal dichalcogenides
could help overcome the scaling limits of silicon complementary metal–oxide …

Tremendous efforts have been devoted to preparing the ultrathin two‐dimensional (2D)
transition‐metal dichalcogenides (TMDCs) and TMDCs‐based heterojunctions owing to …

One of the major areas of semiconductor device research is the development of transparent
or ohmic contacts between semiconductors and metal electrodes for the efficient injection of …

Nanomaterials are known to exhibit a number of interesting physical and chemical
properties for various applications, including energy conversion and storage, nanoscale …

Semiconductor technology, which is rapidly evolving, is poised to enter a new era for which
revolutionary innovations are needed to address fundamental limitations on material and …

In the post‐Moore era, 2D materials with rich physical properties have attracted widespread
attention from the scientific and industrial communities. Among 2D materials, the 2D …