The article overviews experimental results obtained by applying internal photoemission
(IPE) spectroscopy methods to characterize electron states in single-or few-monolayer thick …

For the integration of two-dimensional (2D) transition metal dichalcogenides (TMDC) with
high-performance electronic systems, one of the greatest challenges is the realization of …

Ultrathin, transparent, and flexible devices with multifunctionalities are indispensable for
emerging technologies. However, the related reports are very few, and the efficiency is …

Abstract 2D materials offer a pathway for further scaling of CMOS technology. However, for
this to become a reality, both n-MOS and p-MOS should be realized, ideally with the same …

The oxides of group 14 have been widely used in numerous applications in glass, ceramics,
optics, pharmaceuticals, and food industries and semiconductors, photovoltaics …

In this work, a self-consistent method is used to identify and describe defects plaguing 300
mm integrated 2D field-effect transistors. This method requires measurements of the transfer …

The properties of thin Pd 2 Si layers fabricated by means of magnetron sputtering deposition
from a stoichiometric target was examined. Optical parameters were determined using …

We present measurements and a model of aluminum oxidation induced by ultraviolet (UV)
radiation. Spots of oxide were grown by focusing synchrotron radiation onto a polycrystalline …

Electron emission characteristics, mainly the intrinsic secondary electron yield, of an
insulator material (glass SiO 2) are studied by a Monte Carlo simulation method. In the …

Exploring the thickness-dependent electronic properties of ultrathin transition metal
dichalcogenides is crucial for novel optoelectronic devices. Particularly important is …