Transparent conductive oxides (TCOs) are a well‐known material class allowing Ohmic
conduction. A large free carrier concentration in the 1021 cm− 3 range and high conductivity …

Postfabrication rapid thermal annealing (RTA) and subsequent nitrous oxide plasma
treatment improved the performance of zinc oxide (ZnO) thin-film transistors (TFTs) in terms …

We compared the properties of ZnO thin-film transistors in the inverted coplanar geometry on
thermally grown silicon oxide gate dielectric to devices on silicon nitride, grown by plasma …

Abstract Eu 3+ doped ZnO (ZnO: Eu 3+) thin films were prepared by pulsed laser deposition
at different oxygen partial pressures. The all ZnO: Eu 3+ thin films have a hexagonal …

This is the first report demonstrating that InGaZnO (IGZO) thin films deposited using DC
magnetron sputtering can be used for the active channel layer of a thin film transistor (TFT) …

An RF sputtered ZnO thin film was utilized in a thin film transistor (TFT) fabrication. The film
was fabricated on SiO 2 gate oxide that was thermally grown on Si Substrate. Few …

High quality Pt Schottky contact to n-type ZnO was formed using KrF excimer laser. A pulsed
laser irradiation of n-type ZnO in O 2 pressure of 0.1 Mtorr⁠, prior to Pt metal deposition …

This research focuses on the radiation tolerance of ZnO and CuGaO 2 based semiconductor
application for space borne application. In this research, n-ZnO/p-CuGaO 2 based …

The communication reports the characterization of n^++-Al: ZnO/Al _2 2 O _3 3/n-ZnO thin
film transistors (TFTs) developed by using an indigenously designed low-cost aerosol …

Metal-semiconductor field-effect transistors (MESFETs) were fabricated by reactive dc
sputtering of either Ag, Pt, Pd, and Au as Schottky gate contacts on ZnO thin films grown by …