In this review, a review a of the applications of micro-Raman spectroscopy (μRS) to
characterize the residual strain and/or stress in electronic packaging is presented. Micro …

Nanoelectronics is changing the way the world communicates, and is transforming our daily
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …

The stress dependencies of the phonon modes in a 4H silicon carbide (SiC) crystal were
investigated. The deformation potentials of the A 1 (TO), E 2, and E 1 (TO) modes were …

This paper provides a detailed description explaining how to calculate the relation between
the silicon Raman frequency and local stress or strain in the silicon, applied to stress …

In this study, we investigated the operational characteristics of AlGaN/GaN high electron
mobility transistors (HEMTs) by applying the copper-filled trench and via structures for …

We detected all components of the deformation potential constants of 4H-SiC by first-
principles calculations and developed a method to estimate the stress distribution in 4H-SiC …

GeSn is being paid much attention as a next-generation channel material. In this work, we
performed the excitation of forbidden transverse optical (TO) phonons from strained GeSn …

Three-dimensional (3D) micro-Raman spectroscopy mapping of mechanical stress induced
by Cu through-Si vias (TSVs) in the Si substrate is reported. The 3D-map is obtained by …

The phonon deformation potentials (PDPs), p and q, of Si 1− x Ge x with the whole range of
the Ge concentration x were examined in detail in pursuit of accurate strain measurements …

We determine the stress deformation potentials using micro-Raman spectroscopy and
evaluate thermal stress in a (− 201) plane β-Ga 2 O 3 mounted on a Cu plate with a Pb-free …