There is currently much activity toward the integration of mid-infrared semiconductor lasers
on Si substrates for developing a variety of smart, compact, sensors based on Si-photonics …

Realizing efficient on-chip light sources has long been the “holy-grail” for Si-photonics
research. Several important breakthroughs were made in this field in the past few years. In …

With continuously growing global data traffic, silicon (Si)-based photonic integrated circuits
have emerged as a promising solution for high-performance Intra-/Inter-chip optical …

Efficient III-V lasers directly grown on Si remain the “holy grail” for present Si-photonics
research. In particular, a bufferless III-V laser grown on the Si-photonics 220 nm silicon-on …

Heteroepitaxy of III–V compound semiconductors on industry standard (001) silicon (Si)
substrates is highly desirable for large-scale electronic and photonic integrated circuits …

Epitaxial growth of III–V lasers on the (001) Si platform is emerging as the ultimate
integration strategy for low-cost, energy-efficient, and wafer-scale photonic integrated …

Epitaxially integrating III-V lasers with Si-photonics is the key for compact, efficient, and
scalable photonic integrated circuits (PICs). Here we present an investigation of a path …

The realization of high-performance Si-based III-V quantum-dot (QD) lasers has long
attracted extensive interest in optoelectronic circuits. This manuscript presents InAs/GaAs …

Realization of fully integrated silicon photonics has been handicapped by the lack of a
reliable and efficient III-V light source on Si. Specifically, electrically pumped continuous …

Practical applications of low-defect III–V materials grown on Si require large areas for
patterning metal contacts and enhancing design flexibility. Here, we report selective area …