Structural and optoelectronic characteristics of β-Ga 2 O 3 epitaxial films with Zn alloying and subsequent oxygen annealing
X Sun, K Liu, X Chen, Q Hou, Z Cheng… - Journal of Materials …, 2023 - pubs.rsc.org
Pure and∼ 7.5 at% Zn alloyed β-Ga2O3 epitaxial films were epitaxially grown by metal
organic chemical vapor deposition choosing sapphire (c-plane) as substrates, followed by …
organic chemical vapor deposition choosing sapphire (c-plane) as substrates, followed by …
Self-Powered p-NiO/n-Ga2O3 Heterojunction Solar-Blind Photodetector With Record Detectivity and Open Circuit Voltage
Self-powered solar-blind photodetector (SBPD) promises potential applications that urgently
need portability and low-power consumption. Herein, an ultrasensitive self-powered pn …
need portability and low-power consumption. Herein, an ultrasensitive self-powered pn …
Stable Ga2O3 soft x-ray detector with ultrahigh responsivity
S Yu, Y Liu, X Hou, M Ding, Y Zou, Y Guan… - Applied Physics …, 2024 - pubs.aip.org
Soft x-ray detectors play crucial roles in biology, chemistry, and lithography. Current soft x-
ray detectors suffer from insufficient responsivity (R), excessively large cell area, and limited …
ray detectors suffer from insufficient responsivity (R), excessively large cell area, and limited …
2.83-kV double-layered NiO/β-Ga2O3 vertical pn heterojunction diode with a power figure-of-merit of 5.98 GW/cm2
T Han, Y Wang, Y Lv, S Dun, H Liu, A Bu… - Journal of …, 2023 - iopscience.iop.org
This work demonstrates high-performance NiO/β-Ga 2 O 3 vertical heterojunction diodes
(HJDs) with double-layer junction termination extension (DL-JTE) consisting of two p-typed …
(HJDs) with double-layer junction termination extension (DL-JTE) consisting of two p-typed …
Effect of annealing temperature on solar-blind photodetectors based on 60-nm-thick Ga2O3 films
S Wang, N Cheng, G Zhong, X Liu, Z Wang, H Chen… - Applied Physics A, 2024 - Springer
Abstract In this study, 60-nm-thick Ga2O3 films were deposited on c-plane sapphire
substrates by atomic layer deposition process. The effect of annealing temperature on both …
substrates by atomic layer deposition process. The effect of annealing temperature on both …
Ultrathin Sn-doped Ga2O3 for power field-effect transistors: Si-compatible 4-inch array with high-k gate dielectric
ZC Liu, JC Li, HX Yang, H Yang, Y Huang… - Science …, 2024 - pubmed.ncbi.nlm.nih.gov
Ultrathin Sn-doped Ga2O3 for power field-effect transistors: Si-compatible 4-inch array with
high-k gate dielectric Ultrathin Sn-doped Ga 2 O 3 for power field-effect transistors: Si-compatible …
high-k gate dielectric Ultrathin Sn-doped Ga 2 O 3 for power field-effect transistors: Si-compatible …
Influence of Annealing Temperature on Photoelectric Properties of Solar-Blind Photodetectors Based on Β-Ga2o3 Thin Films
S Wang, Y Zhao, N Cheng, Y Ren, X Liu, L Li… - Available at SSRN … - papers.ssrn.com
In this work, Ga2O3 thin films were deposited on c-plane sapphire substrates by atomic layer
deposition technique followed by post annealing process. The influence of post annealing …
deposition technique followed by post annealing process. The influence of post annealing …