Topological phases in polar oxide nanostructures
The past decade has witnessed dramatic progress related to various aspects of emergent
topological polar textures in oxide nanostructures displaying vortices, skyrmions, merons …
topological polar textures in oxide nanostructures displaying vortices, skyrmions, merons …
Recent developments in p‐Type oxide semiconductor materials and devices
Z Wang, PK Nayak, JA Caraveo‐Frescas… - Advanced …, 2016 - Wiley Online Library
The development of transparent p‐type oxide semiconductors with good performance may
be a true enabler for a variety of applications where transparency, power efficiency, and …
be a true enabler for a variety of applications where transparency, power efficiency, and …
PVDF‐based ferroelectric polymers in modern flexible electronics
Ferroelectric polymers are the most promising electroactive materials with outstanding
properties that can be integrated into a variety of flexible electronic devices. Their …
properties that can be integrated into a variety of flexible electronic devices. Their …
Progress and challenges for memtransistors in neuromorphic circuits and systems
Due to the increasing importance of artificial intelligence (AI), significant recent effort has
been devoted to the development of neuromorphic circuits that seek to emulate the energy …
been devoted to the development of neuromorphic circuits that seek to emulate the energy …
Ferroelectric polymers for neuromorphic computing
The last few decades have witnessed the rapid development of electronic computers relying
on von Neumann architecture. However, due to the spatial separation of the memory unit …
on von Neumann architecture. However, due to the spatial separation of the memory unit …
Ferroelectric polarization effect on surface chemistry and photo-catalytic activity: A review
The current efficiency of various photocatalytic processes is limited by the recombination of
photogenerated electron–hole pairs in the photocatalyst as well as the back-reaction of …
photogenerated electron–hole pairs in the photocatalyst as well as the back-reaction of …
Back-end, CMOS-compatible ferroelectric field-effect transistor for synaptic weights
Neuromorphic computing architectures enable the dense colocation of memory and
processing elements within a single circuit. This colocation removes the communication …
processing elements within a single circuit. This colocation removes the communication …
Ferroelectric polymers for non‐volatile memory devices: a review
Ferroelectric memories have attracted great attention for data storage, and ferroelectric
polymers have been widely studied with the development of flexible and wearable devices …
polymers have been widely studied with the development of flexible and wearable devices …
Ferroelectric symmetry-protected multibit memory cell
L Baudry, I Lukyanchuk, VM Vinokur - Scientific reports, 2017 - nature.com
The tunability of electrical polarization in ferroelectrics is instrumental to their applications in
information-storage devices. The existing ferroelectric memory cells are based on the two …
information-storage devices. The existing ferroelectric memory cells are based on the two …
Lanthanum doping enabling high drain current modulation in a p-type tin monoxide thin-film transistor
Effects of lanthanum (La) loading on the structural, optical, and electrical properties of tin
monoxide (SnO) films were examined as a p-type semiconducting layer. La loading up to 1.9 …
monoxide (SnO) films were examined as a p-type semiconducting layer. La loading up to 1.9 …