Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers
D Pierścińska - Journal of Physics D: Applied Physics, 2017 - iopscience.iop.org
This review focuses on theoretical foundations, experimental implementation and an
overview of experimental results of the thermoreflectance spectroscopy as a powerful …
overview of experimental results of the thermoreflectance spectroscopy as a powerful …
Asymmetric heterostructure with reduced distance from active region to heatsink for 810-nm range high-power laser diodes
A Malag, E Dabrowska, M Teodorczyk… - IEEE Journal of …, 2012 - ieeexplore.ieee.org
An asymmetric heterostructure design has been proposed to meet high-power laser diode
(LD) requirements, such as a high catastrophic optical damage threshold, a low internal …
(LD) requirements, such as a high catastrophic optical damage threshold, a low internal …
Infrared imaging of semiconductor lasers
A Kozlowska - Semiconductor science and technology, 2007 - iopscience.iop.org
The implementation of infrared imaging for the purpose of thermal analysis of semiconductor
lasers is demonstrated. The experimental results obtained in the different spectral bands …
lasers is demonstrated. The experimental results obtained in the different spectral bands …
2-W high-efficiency ridge-waveguide lasers with single transverse mode and low vertical divergence
S Zhao, Y Wang, H Qu, Y Liu, X Zhou… - IEEE Photonics …, 2017 - ieeexplore.ieee.org
We report recent developments on 980-nm single-transverse-mode ridge-waveguide (RW)
lasers with high efficiency and low-vertical divergence. RW lasers fabricated with 7-μm-wide …
lasers with high efficiency and low-vertical divergence. RW lasers fabricated with 7-μm-wide …
Employment of thin p-AlAs to improve near-infrared laser diodes
We modeled the effect of thin AlAs in a single quantum well separate confinement
heterostructure laser diode (SQW SCH LD) to reduce the current threshold and enhance the …
heterostructure laser diode (SQW SCH LD) to reduce the current threshold and enhance the …
The influence of the growth temperature and interruption time on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods
The impact of two technological parameters, ie, the growth temperature and the interface
growth interruption, on the crystal quality of strained InGaAs/GaAs quantum well (QW) …
growth interruption, on the crystal quality of strained InGaAs/GaAs quantum well (QW) …
Low-loss smile-insensitive external frequency-stabilization of high power diode lasers enabled by vertical designs with extremely low divergence angle and high …
P Crump, S Knigge, A Maaßdorf… - High-Power Diode …, 2013 - spiedigitallibrary.org
Broad area lasers with narrow spectra are required for many pumping applications and for
wavelength beam combination. Although monolithically stabilized lasers show high …
wavelength beam combination. Although monolithically stabilized lasers show high …
Comparison of AlGaInAs/InP semiconductor lasers (λ= 1450–1500 nm) with ultra-narrow and strongly asymmetric waveguides
NA Volkov, VN Svetogorov, YL Ryaboshtan… - Quantum …, 2021 - iopscience.iop.org
Semiconductor lasers based on AlGaInAs/InP heterostructures with ultra-narrow and
asymmetric waveguides are comparatively studied. It is shown that the use of these …
asymmetric waveguides are comparatively studied. It is shown that the use of these …
高亮度布拉格反射波导激光器
汪丽杰， 佟存柱， 曾玉刚， 田思聪， 吴昊， 杨海贵… - 2013 - ir.ciomp.ac.cn
摘要设计并制备了808 nm 波长布拉格反射波导激光器, 在垂直方向采用光子带隙效应进行光场
限制, 实现了超大光模式体积和单横模激射. 所制备的10μm 条宽, 未镀腔面膜的器件在室温 …
限制, 实现了超大光模式体积和单横模激射. 所制备的10μm 条宽, 未镀腔面膜的器件在室温 …
Pump diode lasers
C Harder - Optical Fiber Telecommunications VA, 2008 - Elsevier
Publisher Summary Erbium-doped fiber amplifiers (EDFAs) pumped by bulky argon lasers
were known for several years before telecom system designers took them seriously; the key …
were known for several years before telecom system designers took them seriously; the key …