Memory reliability is a critical issue in SRAM-based In-Memory Computing (IMC)
architecture. The rapid advance in transistor technology makes SRAM more sensitive to soft …

The separation of memory and computing units in the von Neumann architecture leads to
undesirable energy consumption due to data movement and insufficient memory bandwidth …

In-memory computing (IMC) is considered one of the most promising candidates to solve the
nontraditional challenges conventional computing systems face in dealing with novel big …

In-memory computing represents an efficient paradigm for high-performance computing
using crossbar arrays of emerging nonvolatile devices. While various techniques have …

Wearable devices have broadened the horizons of healthcare systems within consumer
digital products. However, these devices have limited power resources, emphasizing the …

Today's on-chip computing power is constrained by the “memory wall” and “power wall”
caused by the Von Neumann bottleneck. As a potential solution, this work has developed …

This paper presents leveraging the neural network detector to improve the performance of a
spin transfer torque magnetic random-access memory (STT-MRAM), where the sparse …

The recently developed logic-in-memory offers a high-performance and energy-efficient
paradigm based on crossbar arrays of emerging non-volatile devices. However, the low …

Processing in memory (PiM) represents a promising computing paradigm to enhance
performance and/or energy efficiency of numerous emerging data-intensive applications …

在使用新型非易失性存储阵列进行存内计算的研究中, 存内乘法器的延迟往往随着位宽的增加呈
指数增长, 严重影响计算性能. 该文设计一种电压调控自旋轨道矩磁随机存储器(VGSOT-MRAM) …