Failure mechanisms driven reliability models for power electronics: A review

OE Gabriel, DR Huitink - Journal of …, 2023 - asmedigitalcollection.asme.org
Miniaturization as well as manufacturing processes that electronics devices are subjected to
often results in to increase in operational parameters such as current density, temperature …

Recent progress in physics-based modeling of electromigration in integrated circuit interconnects

WS Zhao, R Zhang, DW Wang - Micromachines, 2022 - mdpi.com
The advance of semiconductor technology not only enables integrated circuits with higher
density and better performance but also increases their vulnerability to various aging …

Real-time full-chip thermal tracking: A post-silicon, machine learning perspective

S Sadiqbatcha, J Zhang, H Amrouch… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
In this article, we present a novel approach to real-time tracking of full-chip heatmaps for
commercial off-the-shelf microprocessors based on machine-learning. The proposed post …

Post-silicon heat-source identification and machine-learning-based thermal modeling using infrared thermal imaging

S Sadiqbatcha, J Zhang, H Zhao… - … on Computer-Aided …, 2020 - ieeexplore.ieee.org
In this article, we present a novel post-silicon approach to locating the dominant heat
sources on commercial multicore processors using heatmaps measured via an infrared (IR) …

Fast thermal analysis for chiplet design based on graph convolution networks

L Chen, W Jin, SXD Tan - 2022 27th Asia and South Pacific …, 2022 - ieeexplore.ieee.org
2.5 D chiplet-based technology promises an efficient integration technique for advanced
designs with more functionality and higher performance. Temperature and related thermal …

Worst-case power integrity prediction using convolutional neural network

X Dong, Y Chen, J Chen, Y Wang, J Li, T Ni… - ACM Transactions on …, 2023 - dl.acm.org
Power integrity analysis is an essential step in power distribution network (PDN) sign-off to
ensure the performance and reliability of chips. However, with the growing PDN size and …

Interconnect electromigration modeling and analysis for nanometer ICs: From physics to full-chip

S Tan, Z Sun, S Sadiqbatcha - IPSJ Transactions on System and LSI …, 2020 - jstage.jst.go.jp
In this article, we will present recent advances in VLSI reliability effects with a focus on
electromigration (EM) failure/aging effect on interconnects, which is one of the most …

Computational evaluation of optimal reservoir and sink lengths for threshold current density of electromigration damage considering void and hillock formation

R Takaya, K Sasagawa, T Moriwaki, K Fujisaki - Microelectronics Reliability, 2021 - Elsevier
Reservoirs, extensions at the cathode-end, are constructed to extend the lifetime of
integrated circuit (IC) lines in terms of electromigration (EM) damage. The threshold current …

Experimental evaluation of threshold current density for electromigration damage in Al interconnect line with reservoir and sink structure

T MORIWAKI, R TAKAYA, K SASAGAWA… - Mechanical …, 2022 - jstage.jst.go.jp
The reservoir is an expansion at the cathode-end in the electric line, which improves the
lifetime for electromigration (EM). In contrast, the sink, an additional part at the anode-end …

A method to determine critical circuit blocks for electromigration based on temperature analysis

RO Nunes, JL Ramirez, RL de Orio - Microelectronics Reliability, 2020 - Elsevier
In this work, a method to determine critical circuit blocks for electromigration in an integrated
circuit based on a temperature analysis of the metallization layers is developed. Considering …