Despite the emerging multi-phase and multi-level converters, two-level insulated gate
bipolar transistor-based power converters are still widely used in industrial applications in …

In the welding insulated gate bipolar transistor (IGBT) module, the module failure caused by
bonding wire failure accounts for about 70% of the total module failure. Therefore, it is …

Aluminum electrolytic capacitors are some of the weakest components in a power converter
system. Therefore, condition monitoring of capacitors can prevent unexpected system …

Power semiconductor devices are vulnerable to thermomechanical fatigue due to
temperature cycling caused by system load profile and external climatic conditions. As the …

Power devices may become damaged or even fail completely due to over-current caused by
external factors such as ac line transients, mechanical overload, misfiring, inverter shoot …

The problems associated with the greenhouse effect have increased the desire to limit
carbon dioxide (CO2) emissions into the atmosphere, including emissions produced by …

Connecting theory and practice in teaching is sometimes difficult as it requires expensive or
delicate equipment, thus limiting the teacher to giving demonstrations in which students are …

Insulated gate bipolar transistors have gained leading position in aerospace and marine
applications. However, due to the fact that the power devices are exposed to electrical …

According to gaining importance of power electronics systems in the society, reliability
issues of power semiconductor devices are the constrains on availability of the system …

This paper proposes a method to identify damage-sensitive electrical parameters (DESPs)
for insulated gate bipolar transistor (IGBT) bond wires. Multiphysics simulations are …