The development of infrared photodetectors is increasingly moving towards the realization of
large-scale, cost-effective integrated systems. Currently, silicon (Si), indium gallium arsenide …

In recent years, mercury chalcogenide colloidal quantum dots (CQDs) have attracted
widespread research interest due to their unique electronic structure and optical properties …

Colloidal quantum dot (CQD) technology is considered the main contender toward a low-
cost high-performance optoelectronic technology platform for applications in the short-wave …

Ultrafast short‐wavelength infrared (SWIR) photodetection is of great interest for emerging
automated vision and spatial mapping technologies. Colloidal quantum dots (QDs) stand out …

Colloidal quantum dots (CQDs) are powerful components for next‐generation infrared (IR)
optoelectronic devices owing to their confinement‐based bandgap‐tunability, cost …

The limitations of two-dimensional (2D) graphene in broadband photodetector are overcome
by integrating nitrogen (N) doping into three-dimensional (3D) structures within silicon (Si) …

III‐V colloidal quantum dots (CQDs) are of interest in infrared photodetection, and recent
developments in CQDs synthesis and surface engineering have improved performance …

Colloidal quantum dots, with their size-tunable optoelectronic properties and scalable
synthesis, enable applications in which inexpensive high-performance semiconductors are …

The interfacial pyro-phototronic effect (IPPE) presents a novel approach for improving the
performance of self-powered photodetectors (PDs) based on metal halide perovskites …

High-quality photodetectors are essential for getting external information, especially those
operating in the near-infrared range. These devices play a critical role in remote …