G Kim, S Park, S Kim - Nanomaterials, 2024 - mdpi.com
Memristor devices for resistive-switching memory and artificial synapses have emerged as promising solutions for overcoming the technological challenges associated with the von …
Q Zhang, Q Che, D Wu, Y Zhao, Y Chen… - Angewandte …, 2024 - Wiley Online Library
Organic memristors based on covalent organic frameworks (COFs) exhibit significant potential for future neuromorphic computing applications. The preparation of high‐quality …
Natural plant-material-based memory devices have been in the spotlight due to their versatile applications ranging from nonvolatile memory to neuromorphic computations …
Y Chen, G Zhang, F Liu, B Wu, Y Deng, D Gao… - Journal of …, 2025 - jos.ac.cn
As traditional von Neumann architectures face limitations in handling the demands of big data and complex computational tasks, neuromorphic computing has emerged as a …
D Cui, M Pei, Z Lin, Y Wang, H Zhang, X Gao, H Yuan… - Chip, 2024 - Elsevier
The human brain possesses a highly developed capability for sense-memory-computation, and the integration of hardware with brain-like functions represents a novel approach to …
Y Zhu, Y Zhang, S Yang, X Ma, H Lu, Y Liu… - Applied Physics …, 2025 - pubs.aip.org
Hafnium oxide (HfO x) films are highly valued as functional layers in nonvolatile resistive switching (RS) memristors due to their scalability, compatibility with CMOS technology, and …
S Di Giacomo, M Ronchi, M Amadori… - … on Radiation and …, 2025 - ieeexplore.ieee.org
Machine learning (ML) accelerators represent an attractive area of research, offering the potential to streamline algorithmic complexity and handle massively parallel in-memory …
M Khemnani, M Jain, D Hirpara, M Kumar… - Journal of Applied …, 2025 - pubs.aip.org
Conventional computing architectures are not suited to meet the unique workload requirements of artificial intelligence and deep learning, which has sparked a growing …
I Angervo, A Antola, T Vaimala, A Malmi… - Journal of Physics D …, 2024 - iopscience.iop.org
We report on the impact of the growth method and substrate-induced crystalline quality on the performance of planar Al/Gd 0.2 Ca 0.8 MnO 3/Au memristor devices. Structural …